The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology

MLA

Yuan, Hl, et al. “The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology.” Urn:ISSN:2274-7214, 2017. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1081419957&authtype=sso&custid=ns315887.

APA

Yuan, H., Agarwal, R., Tandon, P., Wang, E., Ramelan, A., Wahyuningsih, S., & Goldys, E. ; https://orcid. org/000.-0003-2470-7118. (2017). The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology. Urn:ISSN:2274-7214.

Chicago

Yuan, Hl, Rk Agarwal, P Tandon, Ex Wang, Ah Ramelan, S Wahyuningsih, and E ; https://orcid.org/0000-0003-2470-7118 Goldys. 2017. “The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology.” Urn:ISSN:2274-7214. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1081419957&authtype=sso&custid=ns315887.