Computer simulation of gamma irradiation energy deposition in MOSFET dosimeters

The application of MOSFETs as detectors or device components in pulse power technique requires an investigation of their characteristics in radiation fields. Computing possibilities of the renowned programs FOTELP and PENELOPE for determining the energy deposited in MOISFET structure and dose distribution within microscopic dimensions of the dosimeter sensitive volume were presented in this paper. Based on the obtained results, qualitative conclusions were drawn about the values of energy deposited in different material zones having various dimensions. The difference between the two codes used for calculations in materials physics and semiconductor technics, basically originates from the different physical models for numerical simulation of photon, positron, and electron transport through various materials.