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The impact of externally applied mechanical stress on analog and RF performances of SOI MOSFETs
- Source :
- Journal of Telecommunications and Information Technology, no. 4, p. 18-24 (2009)
- Publication Year :
- 2009
-
Abstract
- This paper presents a complete study of the impact of mechanical stress on the performance of SOI MOSFETs. This investigation includes dc, analog and RF characteristics. Parameters of a small-signal equivalent circuit are also ex- tracted as a function of applied mechanical stress. Piezore- sistance coefficient is shown to be a key element in describing the enhancement in the characteristics of the device due to mechanical stress.
Details
- Database :
- OAIster
- Journal :
- Journal of Telecommunications and Information Technology, no. 4, p. 18-24 (2009)
- Notes :
- 0en
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1130530118
- Document Type :
- Electronic Resource