The impact of externally applied mechanical stress on analog and RF performances of SOI MOSFETs

This paper presents a complete study of the impact of mechanical stress on the performance of SOI MOSFETs. This investigation includes dc, analog and RF characteristics. Parameters of a small-signal equivalent circuit are also ex- tracted as a function of applied mechanical stress. Piezore- sistance coefficient is shown to be a key element in describing the enhancement in the characteristics of the device due to mechanical stress.