The local metallicity of gadolinium doped compound semiconductors

Authors :: Colon Santana, J. A.
Liu, Pan
Wang, Xianjie
Tang, J.
McHale, S. R.
Wooten, D.
McClory, J. W.
Petrosky, J. C.
Wu, J.
Palai, R.
Losovjy, Ya B.
Dowben, P. A.
Colon Santana, J. A.
Liu, Pan
Wang, Xianjie
Tang, J.
McHale, S. R.
Wooten, D.
McClory, J. W.
Petrosky, J. C.
Wu, J.
Palai, R.
Losovjy, Ya B.
Dowben, P. A.
Source :: Department of Physics and Astronomy: Faculty Publications
Publication Year :: 2012
Abstract: The local metallicities of Hf0:97Gd0:03O2, Ga0:97Gd0:03N, Eu0:97Gd0:04O and EuO films were studied through a comparison of the findings from constant initial state spectroscopy using synchrotron light. Resonant enhancements, corresponding to the 4d→4f transitions of Eu and Gd, were observed in some of the valence band photoemission features. The resonant photoemission intensity enhancements for the Gd 4f photoemission features are far stronger for the more insulating host systems than for the metallic system Eu0:96Gd0:04O. The evidence seems to suggest a correlation between the effective screening in the films and the resonant photoemission process.

Tools