Linearly polarized single photon antibunching from a site-controlled InGaN quantum dot

We report on the observation of linearly polarized single photon antibunching in the excitonic emission from a site-controlled InGaN quantum dot. The measured second order coherence function exhibits a significant dip at zero time difference, corresponding to g(m)(2) (0) = 0: 90 under continuous laser excitation. This relatively high value of g(m)(2) (0) is well understood by a model as the combination of short exciton life time (320 ps), limited experimental timing resolution and the presence of an uncorrelated broadband background emission from the sample. Our result provides the first rigorous evidence of InGaN quantum dot formation on hexagonal GaN pyramids, and it highlights a great potential in these dots as fast polarized single photon emitters if the background emission can be eliminated.
Funding Agencies|Carl Trygger Foundation for Scientific Research; Swedish Research Council (VR); Nano-N consortium - Swedish Foundation for Strategic Research (SSF); Knut and Alice Wallenberg Foundation; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; Font-D, at Linkoping University