High 2DEG mobility of HEMT structures grown on 100 mm SI 4H-SiC substrates by hot-wall MOCVD

MLA

Ciechonski, Rafal, et al. High 2DEG Mobility of HEMT Structures Grown on 100 Mm SI 4H-SiC Substrates by Hot-Wall MOCVD. 2007. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1234100474&authtype=sso&custid=ns315887.

APA

Ciechonski, R., Lundskog, A., Forsberg, U., Kakanakova-Georgieva, A., Pedersen, H., & Janzén, E. (2007). High 2DEG mobility of HEMT structures grown on 100 mm SI 4H-SiC substrates by hot-wall MOCVD.

Chicago

Ciechonski, Rafal, Anders Lundskog, Urban Forsberg, Anelia Kakanakova-Georgieva, Henrik Pedersen, and Erik Janzén. 2007. “High 2DEG Mobility of HEMT Structures Grown on 100 Mm SI 4H-SiC Substrates by Hot-Wall MOCVD.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1234100474&authtype=sso&custid=ns315887.