1.3-mu m InGaAs vertical-cavity surface-emitting lasers

Authors :: Hammar, Mattias
von Würtemberg, Rickard Marcks
Sundgren, Petrus
Berggren, Jesper
Larsson, A.
Söderberg, E.
Modh, P.
Gustavsson, J.
Ghisoni, M.
Chitica, N.
Hammar, Mattias
von Würtemberg, Rickard Marcks
Sundgren, Petrus
Berggren, Jesper
Larsson, A.
Söderberg, E.
Modh, P.
Gustavsson, J.
Ghisoni, M.
Chitica, N.
Publication Year :: 2005
Abstract: We report on the fabrication and performance of N-free InGaAs/GaAs 1.3-mu m range vertical-cavity surface-emitting lasers (VCSELs). Using optimized quantum-well (QW) growth conditions in combination with negative gain-cavity tuning, high-performance VCSELs with emission wavelength up to 1300 nm are realized. The performance figures include mA-range threshold currents, mW-range singlemode output power, continuous-wave operation up to 140 degrees C and 10 Gbit/s data transmission.<br />QC 20111014