Transport properties of ferromagnetic GaMnAs interfaced with paramagnetic ZnMnSe in the form of bilayer structures

We have investigated the magnetotransport properties of a series of magnetic semiconductor bilayer structures consisting of 300-nm-thick Ga1-x Mnx As and 150-nm-thick Zn1-y Mny Se layers. The temperature scan of resistance and an Arrot plot obtained from Hall resistance data showed that the Curie temperature (TC) of the GaMnAsZnMnSe bilayer is higher than that of the bare GaMnAs. Furthermore, magnetoresistance measurement reveals significant enhancement of the magnetic hardness of the GaMnAs system in bilayer form even though the magnetic easy axis of the GaMnAs was not altered by the neighboring ZnMnSe layer. This observation indicates that the magnetotransport properties of GaMnAs can be changed by an adjacent magnetic layer due to the interactions between the two magnetic layers. © 2006 American Institute of Physics.
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