Photoelectric properties of p(+)-n junctions based on 4H-SiC ion-implanted with aluminum

MLA

Violina, G. N., et al. Photoelectric Properties of p(+)-n Junctions Based on 4H-SiC Ion-Implanted with Aluminum. 2002. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1235058284&authtype=sso&custid=ns315887.

APA

Violina, G. N., Kalinina, E. V., Kholujanov, G. F., Onushkin, G. A., Kossov, V. G., Yafaev, R. R., Hallén, A., & Konstantinov, A. O. (2002). Photoelectric properties of p(+)-n junctions based on 4H-SiC ion-implanted with aluminum.

Chicago

Violina, G. N., E. V. Kalinina, G. F. Kholujanov, G. A. Onushkin, V. G. Kossov, R. R. Yafaev, Anders. Hallén, and A. O. Konstantinov. 2002. “Photoelectric Properties of p(+)-n Junctions Based on 4H-SiC Ion-Implanted with Aluminum.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1235058284&authtype=sso&custid=ns315887.