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Fabrication of tunable InP/air-gap Fabry-Perot cavities by selective etching of InGaAs sacrificial layers

Authors :
Chitica, N
Daleiden, J
Bentell, J
Andre, J
Strassner, M
Greek, Staffan
Pasquariello, Donato
Karlsson, Mikael
Gupta, Ram
Hjort, Klas
Chitica, N
Daleiden, J
Bentell, J
Andre, J
Strassner, M
Greek, Staffan
Pasquariello, Donato
Karlsson, Mikael
Gupta, Ram
Hjort, Klas
Publication Year :
1999

Abstract

We report the fabrication of InP/air-gap Fabry-Perot resonant cavities with an improved tunability characteristic achieved through the micromachining of more flexible suspended InP beams. The micromechanical structures are electrostatically actuated. A tuning range of 55 nm is demonstrated for an actuation voltage of 12 V. The low leakage current, of less than 10 µA for a bias of up to 30 V, provides a low actuation power. The tunable air-gap cavities are fabricated by selective wet etching of InGaAs sacrificial layers. An FeCl3 based etchant is used to completely remove the InGaAs material without affecting the thickness of the InP layer. The anisotropy of the etch rate of InGaAs was also investigated and exploited in the micromachining process.<br />Addresses: Chitica N, Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden. Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden. Univ Uppsala, Dept Mat Sci, S-75121 Uppsala, Sweden.

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1235061998
Document Type :
Electronic Resource
Full Text :
https://doi.org/10.1238.Physica.Topical.079a00131