First experimental demonstration of negative capacitance InGaAs MOSFETs with Hf0.5Zr0.5O2 ferroelectric gate stack

Authors :: Luc, Q. H.
Fan-Chiang, C. C.
Huynh, S. H.
Huang, P.
Do, H. B.
Ha, M. T. H.
Jin, Y. D.
Nguyen, T. A.
Zhang, K. Y.
Wang, H. C.
Lin, Y. K.
Lin, Y. C.
Hu, C.
Iwai, H.
Chang, E. Y.
Luc, Q. H.
Fan-Chiang, C. C.
Huynh, S. H.
Huang, P.
Do, H. B.
Ha, M. T. H.
Jin, Y. D.
Nguyen, T. A.
Zhang, K. Y.
Wang, H. C.
Lin, Y. K.
Lin, Y. C.
Hu, C.
Iwai, H.
Chang, E. Y.
Abstract: We demonstrate, for the first time, the negative capacitance (NC) In 0.53 Ga 0.47 As nMOSFET with 8-nm Hf 0.5 Zr 0.5 O 2 (HZO) as ferroelectric (FE) dielectric for sub-60 mV/dec subthreshold swing (SS). The impact of annealing treatments on the FE properties and electrical characteristics of NC InGaAs nMOSFETs are investigated. Optimized annealing condition results in NC effects at the HZO/Al 2 O 3 /InGaAs nMOSFETs with steep SS property (~ 11 mV/dec).

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