Influence of DSC thermal lag on evaluation of crystallization kinetics

Influence of added thermal resistance on crystallization kinetics, as measured by differential scanning calorimetry (DSC), of the Se70Te30 glass was studied. The increase of thermal resistance was achieved by adding polytetrafluorethylene discs of different thicknesses (up to 0.5 mm) in-between the DSC platform and the pan with sample. Increase of the thermal resistance led to an apparent decrease (by more than 30%) in the crystallization enthalpy. Significant change of model-free kinetics occurred: apparent activation energy E of the crystallization process decreased (by more than 20%) due to the DSC data being progressively shifted to higher temperatures with increasing heating rate. The model-based kinetics was changed only slightly; the DSC peaks retained their asymmetry and the choice of the appropriate model was not influenced by the added thermal resistance. The temperature shift caused by added thermal lag was modeled for the low-to-moderate heating rates.
Pomocí diferenční skenovací kalorimetrie byl sledován vliv přidaného tepelného odporu na měřená kinetická data pro krystalizaci sklovitého Se70Te30.