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Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer
- Source :
- Physica Status Solidi: Rapid Research Letters
- Publication Year :
- 2011
-
Abstract
- We propose a homogeneous nanoscaled (∅ 250 nm) bilayered Pr0.7Ca0.3MnO3 (PCMO)-based memory device that exhibits low power and good memristive switching behavior. Accurate control of the oxygen-deficient (PCMO3-x) layer thickness promotes oxygen migrati
Details
- Database :
- OAIster
- Journal :
- Physica Status Solidi: Rapid Research Letters
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1291792059
- Document Type :
- Electronic Resource