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Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer

Authors :
Park, Sangsu
Jung, Seungjae
Siddik, Manzar
Jo, Minseok
Lee, Joonmyoung
Park, Jubong
Lee, Wootae
Kim, Seonghyun
Sadaf, Sharif Md.
Liu, Xinjun
Hwang, Hyunsang
Park, Sangsu
Jung, Seungjae
Siddik, Manzar
Jo, Minseok
Lee, Joonmyoung
Park, Jubong
Lee, Wootae
Kim, Seonghyun
Sadaf, Sharif Md.
Liu, Xinjun
Hwang, Hyunsang
Source :
Physica Status Solidi: Rapid Research Letters
Publication Year :
2011

Abstract

We propose a homogeneous nanoscaled (∅ 250 nm) bilayered Pr0.7Ca0.3MnO3 (PCMO)-based memory device that exhibits low power and good memristive switching behavior. Accurate control of the oxygen-deficient (PCMO3-x) layer thickness promotes oxygen migrati

Details

Database :
OAIster
Journal :
Physica Status Solidi: Rapid Research Letters
Publication Type :
Electronic Resource
Accession number :
edsoai.on1291792059
Document Type :
Electronic Resource