Experimental and Simulated Strain Field Maps in Stacked Quantum Wires

To manufacture improved nanostructures for telecommunication devices which respond to increasing requirements of data transmission speed and stability, the self-assembly process is an interesting approach to be followed. In this context, the control of the morphology, position, composition and strain of the nano-objects constituting these nanostructures is a crucial factor to improve their functionality [1]. It is well known that, during the growth of stacked layers, the upper nano-objects are strongly influenced by the distribution and intensity of the heterogeneous strain field caused by the ones underneath. Key aspects such as substrate temperature and spacer layer thickness between layers alter the strain field at the growth surface and therefore the nucleation sites of the stacked nano-objects.