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Additive engineering for stable halide perovskite solar cells

Authors :
Ministerio de Economía y Competitividad (España)
Generalitat de Catalunya
Universidad Autónoma de Barcelona
Pereyra, Carlos
Xie, Haibing
Lira-Cantú, Mónica
Ministerio de Economía y Competitividad (España)
Generalitat de Catalunya
Universidad Autónoma de Barcelona
Pereyra, Carlos
Xie, Haibing
Lira-Cantú, Mónica
Publication Year :
2021

Abstract

Halide perovskite solar cells (PSCs) have already demonstrated power conversion efficiencies above 25%, which makes them one of the most attractive photovoltaic technologies. However, one of the main bottlenecks towards their commercialization is their long-term stability, which should exceed the 20-year mark. Additive engineering is an effective pathway for the enhancement of device lifetime. Additives applied as organic or inorganic compounds, improve crystal grain growth enhancing power conversion efficiency. The interaction of their functional groups with the halide perovskite (HP) absorber, as well as with the transport layers, results in defect passivation and ion immobilization improving device performance and stability. In this review, we briefly summarize the different types of additives recently applied in PSC to enhance not only efficiency but also long-term stability. We discuss the different mechanism behind additive engineering and the role of the functional groups of these additives for defect passivation. Special emphasis is given to their effect on the stability of PSCs under environmental conditions such as humidity, atmosphere, light irradiation (UV, visible) or heat, taking into account the recently reported ISOS protocols. We also discuss the relation between deep-defect passivation, non-radiative recombination and device efficiency, as well as the possible relation between shallow-defect passivation, ion immobilization and device operational stability. Finally, insights into the challenge and criteria for additive selection are provided for the further stability enhancement of PSCs.

Details

Database :
OAIster
Publication Type :
Electronic Resource
Accession number :
edsoai.on1306019468
Document Type :
Electronic Resource