Optical spin orientation in SiGe heterostructures

Ge is emerging as an interesting material for spintronic applications. We demonstrate that in SiGe heterostructures strain and quantum confinement effects can be used to tailor spin related properties enhancing the spin polarization of injected carriers above the bulk limit. Moreover the fast ?-L electron scattering and the strain induced removal of the heavy-hole, light-hole degeneracy, make SiGe heterostructures an ideal material platform for the study of hole dynamics. © The Electrochemical Society