Arrayed Van Der Waals Broadband Detectors for Dual-Band Detection

Wafer-scale multilayer GaSe was directly deposited on n-type GaSb substrates with a layer-by-layer epitaxial growth mode, which formed a vertical heterostructure of a dual-band photodetector. Indium (In) as the electrodes was formed on the surface of GaSe and GaSb, as the anode and cathode. To better demonstrate the vertical stacking process of the heterojunction structure, ab initio simulations were performed for GaSe nanosheet grown on the GaSb substrate.