Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD

Herein, metal-organic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] approximate to 2 x 10(19) cm(-3) is performed. In a sequence of MOCVD runs, operational conditions, including temperature and flow rate of precursors, are maintained except for intentionally larger flows of hydrogen carrier gas fed into the reactor. By employing the largest hydrogen flow of 25 slm in this study, the performance of the as-grown Mg-doped GaN layers is certified by a room-temperature hole concentration of p approximate to 2 x 10(17) cm(-3) in the absence of any thermal activation treatment. Experimental evidence is delivered that the large amounts of hydrogen during the MOCVD growth can regulate the incorporation of the Mg atoms into GaN in a significant way so that MgH complex can coexist with a dominant and evidently electrically active isolated Mg-Ga acceptor.
Funding Agencies|Swedish Governmental Agency for Innovation Systems (VINNOVA) under the Competence Center Program [2016-05190]; Linkoping University; Chalmers University of technology; Ericsson; Epiluvac; FMV; Gotmic; Hexagem; Hitachi Energy; On Semiconductor; Saab; SweGaN; UMS; Swedish Research Council VR [2016-00889]; Swedish Foundation for Strategic Research [RIF14-055, EM16-0024]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University, Faculty Grant SFO Mat LiU [2009-00971]