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A 3V 15b 157W Cryo-CMOS DAC for Multiplexed Spin-Qubit Biasing

Authors :
Enthoven, L.A. (author)
van Staveren, J. (author)
Gong, J. (author)
Babaie, M. (author)
Sebastiano, F. (author)
Enthoven, L.A. (author)
van Staveren, J. (author)
Gong, J. (author)
Babaie, M. (author)
Sebastiano, F. (author)
Publication Year :
2022

Abstract

This paper presents a 15b cryo-CMOS DAC for multiplexed spin-qubit biasing implemented in a 22-nm FinFET process. The integrating-DAC architecture and the robust digitally-assisted high-voltage output stage enable a low power dissipation (157W) and small area (0.08mm2) independent of the number of biased qubits, and a 3V output range well beyond the nominal supply. This represents the first scalable solution for cryo-CMOS qubit biasing, which achieves a 1.8× better voltage resolution with a lower DNL over a 3× larger output range than the current state-of-the-art.<br />Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.<br />QCD/Sebastiano Lab<br />Electronics<br />Quantum Circuit Architectures and Technology

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1357879174
Document Type :
Electronic Resource
Full Text :
https://doi.org/10.1109.VLSITechnologyandCir46769.2022.9830309