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Low-Temperature Chemical Vapor Deposition of SiCN for Hybrid Bonding
- Publication Year :
- 2022
-
Abstract
- Low-temperature deposited PE-CVD SiCN has been comprehensively investigated towards the dielectric layer of Die-to-Wafer hybrid bonding. The PECVD SiCN was deposited at room temperature. The characterization of the deposited film and the impact of the plasma activation on the surface has been analyzed.
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1375179615
- Document Type :
- Electronic Resource