Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices

MLA

M. Hoang, T., et al. Thermometric Quantum Sensor Using Excited State of Silicon Vacancy Centers in 4H-SiC Devices. 2021. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1375208554&authtype=sso&custid=ns315887.

APA

M. Hoang, T., Ishiwata, H., Yuta, M., Yuichi, Y., Kojima, K., S.-Y., L., Takeshi, O., Iwasaki, T., Hisamoto, D., & Mutsuko, H. (2021). Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices.

Chicago

M. Hoang, T., H. Ishiwata, Masuyama Yuta, Yamazaki Yuichi, K. Kojima, Lee S.-Y., Ohshima Takeshi, T. Iwasaki, D. Hisamoto, and Hatano Mutsuko. 2021. “Thermometric Quantum Sensor Using Excited State of Silicon Vacancy Centers in 4H-SiC Devices.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1375208554&authtype=sso&custid=ns315887.