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Orbital-Assisted Metal-Insulator Transition in VO2

Authors :
Haverkort, M.W.
Hu, Z.
Tanaka, Arata
Reichelt, W.
Streltsov, S.V.
Korotin, M.A.
Anisimov, V.I.
Hsieh, H.H.
Lin, H.-J.
Chen, C.T.
Khomskii, D.I.
Tjeng, L.H.
Haverkort, M.W.
Hu, Z.
Tanaka, Arata
Reichelt, W.
Streltsov, S.V.
Korotin, M.A.
Anisimov, V.I.
Hsieh, H.H.
Lin, H.-J.
Chen, C.T.
Khomskii, D.I.
Tjeng, L.H.
Publication Year :
2005

Abstract

type:text<br />We found direct experimental evidence for an orbital switching in the V 3d states across the metalinsulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2;3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.

Details

Database :
OAIster
Notes :
application/pdf, English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1378520438
Document Type :
Electronic Resource