Back to Search
Start Over
Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 degrees C
- Authors :
- Nohira, H
Kuroiwa, T
Nakamura, A
Hirose, Y
Mitsui, J
Sakai, W
Nakajima, K
Suzuki, M
Kimura, K
Sawano, K
Nakagawa, K
Shiraki, Y
Hattori, T
Nohira, H
Kuroiwa, T
Nakamura, A
Hirose, Y
Mitsui, J
Sakai, W
Nakajima, K
Suzuki, M
Kimura, K
Sawano, K
Nakagawa, K
Shiraki, Y
Hattori, T
- Publication Year :
- 2004
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1389675473
- Document Type :
- Electronic Resource