Current Imbalance Monitoring in SiC-MOSFET under Unclamped Inductive Switching by Tiny PCB Rogowski Coil

type:Conference Paper
We monitored the current imbalance in a SiC-MOSFET chip under unclamped inductive switching condition by using our printed circuit board Rogowski coils. The current imbalance varied significantly from sample to sample. The SiC-MOSFET with a larger current imbalance was destroyed with lower avalanche current than other samples. It is assumed that the chip was destroyed due to partial temperature rise accompanying current concentration from current distribution and thermal simulation. The result shows that the current monitoring system is effective for analysis of avalanche robustness.
14th International Seminar on Power Semiconductors, August 29-31, 2018, Prague, Czech