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Stability of Sb line structures on Si(001)

Authors :
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China, Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Advanced Research Laboratory, Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan
Department of Electrical Engineering, Kyushu Institute of Technology, Sensui 1-1, Tobata, Kitakyushu, 804-8550, Japan
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Wang, Jian-Tao
Mizuseki, Hiroshi
Kawazoe, Yoshiyuki
Hashizume, Tomihiro
Naitoh, Masamichi
Wang, Ding-Sheng
Wang, En-Ge
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China, Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Advanced Research Laboratory, Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan
Department of Electrical Engineering, Kyushu Institute of Technology, Sensui 1-1, Tobata, Kitakyushu, 804-8550, Japan
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Wang, Jian-Tao
Mizuseki, Hiroshi
Kawazoe, Yoshiyuki
Hashizume, Tomihiro
Naitoh, Masamichi
Wang, Ding-Sheng
Wang, En-Ge
Publication Year :
2017

Abstract

type:Journal Article<br />Structure and stability of Sb-dimer linear chains on the Si(001) surface are studied by means of ab initio quantum-mechanical molecular dynamics using pseudopotentials. It is confirmed that the model comprising a double core of seven-membered rings of silicon for Bi/Si(001) nanolines is indeed one of the most stable structures energetically, and it also explains Sb/Si nanolines. Moreover, it is clear that stability of the odd-membered-ring (5-7-5) structure will decrease as the group-V adatom changes from Bi to Sb, and disappear for As/Si due to the size effect.<br />source:https://doi.org/10.1103/PhysRevB.67.193307<br />source:http://www.aps.org

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1389680289
Document Type :
Electronic Resource