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Vortex liquid entanglement in irradiated YBa_(2)Cu_(3)O_(7) thin films

Authors :
Sefrioui, Zouhair
Arias Serna, Diego
González Herrera, Elvira María
León Yebra, Carlos
Santamaría Sánchez-Barriga, Jacobo
Vicent López, José Luis
Sefrioui, Zouhair
Arias Serna, Diego
González Herrera, Elvira María
León Yebra, Carlos
Santamaría Sánchez-Barriga, Jacobo
Vicent López, José Luis
Publication Year :
2023

Abstract

© 2001 The American Physical Society. Financial support from CICYT Grant Nos. MAT94-0604, MAT97-0675, and MAT99-1706E is acknowledged. Z.S. thanks AECI for financial support.<br />Epitaxial YBa_(2)Cu_(3)O_(7) thin films, grown by high-pressure dc sputtering, are irradiated with He^(+) ions at 80 keV with doses between 10^(14) and 10^(15) cm^(-2). Irradiation reduces the critical temperature but it does not modify the carrier concentration. Angle-dependent resistivity is used to show that the mass anisotropy does not change upon irradiation. The melting transition in magnetic fields applied parallel to the c axis is analyzed by I-V critical scaling, and all irradiated and nonirradiated samples show a three-dimensional vortex glass transition with the same critical exponents. The dissipation in the liquid state is analyzed in terms of the activation energy of the magnetoresistance in a perpendicular magnetic field. While as-grown samples show an activation energy depending as 1/H on the applied magnetic field, irradiated samples show a dependence as 1/H^(0.5), characteristic of plastic deformation of vortices. This is discussed in terms of the point disorder introduced by ion irradiation.<br />CICYT<br />AECI<br />Depto. de Estructura de la Materia, Física Térmica y Electrónica<br />Depto. de Física de Materiales<br />Fac. de Ciencias Físicas<br />TRUE<br />pub

Details

Database :
OAIster
Notes :
application/pdf, 0163-1829, English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1413946116
Document Type :
Electronic Resource