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Cathodoluminescence from Er_2O_3-doped n-type GaSb : Te crystals
- Publication Year :
- 2023
-
Abstract
- © 2002 IOP Publishing Ltd. This work was supported by MCYT (Project MAT2000-2119). Conference on Extended Defects in Semiconductors (EDS 2002)(2002. Bologna, Italia)<br />The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the crystals and spectral broadening. Deconvolution of the CL spectra reveals the existence of four components. The presence of erbium oxide induces a decrease of the 746 meV emission characteristic of Te-doped samples. CL images show a complex distribution of recombination centres which depends to a large extent on he local Te concentration.<br />MCYT<br />Depto. de Física de Materiales<br />Fac. de Ciencias Físicas<br />TRUE<br />pub
Details
- Database :
- OAIster
- Notes :
- application/pdf, 0953-8984, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1413947097
- Document Type :
- Electronic Resource