Statistical Deviations from the Theoretical only-SBU Model to Estimate MCU rates in SRAMs

This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are SBUs. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments).
Ministerio de Ciencia e Innovación (MICINN)
Universidad Complutense de Madrid - Banco Santander
Becas "José Castillejo"
Depto. de Estructura de la Materia, Física Térmica y Electrónica
Depto. de Arquitectura de Computadores y Automática
Fac. de Ciencias Físicas
Fac. de Informática
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