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Cathodoluminescence study of ytterbium doped GaSb

Authors :
Hidalgo Alcalde, Pedro
Méndez Martín, Bianchi
Ruiz, C.
Bermudez, V.
Piqueras de Noriega, Javier
Dieguez, E.
Hidalgo Alcalde, Pedro
Méndez Martín, Bianchi
Ruiz, C.
Bermudez, V.
Piqueras de Noriega, Javier
Dieguez, E.
Publication Year :
2023

Abstract

© 2005 Elsevier B.V. All rights reserved. This work was supported by the EU (HPRN-CT-2001-00199) and MECD (MAT2003-00455).<br />b-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature of the point defects has been found to depend on the position along the growth axis. Doping with Yb has been found to reduce the luminescence intensity of GaSb and no infrared emission related to intra-ionic transitions of the Yb_(3+) ions has been detected<br />EU<br />MECD<br />Depto. de Física de Materiales<br />Fac. de Ciencias Físicas<br />TRUE<br />pub

Details

Database :
OAIster
Notes :
application/pdf, 0921-5107, English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1413949164
Document Type :
Electronic Resource