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The Bain library: A Cu-Au buffer template for a continuous variation of lattice parameters in epitaxial films

Authors :
Kauffmann-Weiss, S.
Hamann, S.
Reichel, L.
Siegel, A.
Alexandrakis, V.
Heller, R.
Schultz, L.
Ludwig, A.
Faehler, S.
Kauffmann-Weiss, S.
Hamann, S.
Reichel, L.
Siegel, A.
Alexandrakis, V.
Heller, R.
Schultz, L.
Ludwig, A.
Faehler, S.
Source :
APL Materials 2(2014)4, 046107
Publication Year :
2014

Abstract

Smallest variations of the lattice parameter result in significant changes in material properties. Whereas in bulk, lattice parameters can only be changed by composition or temperature, coherent epitaxial growth of thin films on single crystals allows adjusting the lattice parameters independently. Up to now only discrete values were accessible by using different buffer or substrate materials. We realize a lateral variation of in-plane lattice parameters using combinatorial film deposition of epitaxial Cu-Au on a 4-in. Si wafer. This template gives the possibility to adjust the in-plane lattice parameter over a wide range from 0.365 nm up to 0.382 nm.

Details

Database :
OAIster
Journal :
APL Materials 2(2014)4, 046107
Notes :
application/pdf, English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1415621053
Document Type :
Electronic Resource