Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology

MLA

Shi, H., et al. “Defect Evolution in GaN Thin Film Heterogeneously Integrated with CMOS-Compatible Si(100) Substrate by Ion-Cutting Technology.” Science China - Information Sciences 66(2023), 219403, 2023. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1415628064&authtype=sso&custid=ns315887.

APA

Shi, H., Yi, A., Ding, J., Liu, X., Qin, Q., Yi, J., Hu, J., Wang, M., Cai, D., Wang, J., Xu, K., Mu, F., Suga, T., Heller, R., 0000-0003-4606-7203) Wang, M., 0000-0002-4885-799X) Zhou, S., Xu, W., Huang, K., You, T., & Ou, X. (2023). Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology. Science China - Information Sciences 66(2023), 219403.

Chicago

Shi, H., A. Yi, J. Ding, X. Liu, Q. Qin, J. Yi, J. Hu, et al. 2023. “Defect Evolution in GaN Thin Film Heterogeneously Integrated with CMOS-Compatible Si(100) Substrate by Ion-Cutting Technology.” Science China - Information Sciences 66(2023), 219403. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1415628064&authtype=sso&custid=ns315887.