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Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires
- Publication Year :
- 2010
-
Abstract
- © American Institute of Physics. This work was supported by Spanish Ministry of Science (through Project Nos. MAT2007-65965-C02-02 and MAT2008-06567-C02) including FEDER funding and the Aragon Regional Government. N. Marcano and S. Sangiao acknowledge financial support from Spanish CSIC (JAE-doc program) and Spanish MEC (FPU program).<br />We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.<br />Ministerio de Ciencia e Innovación (MICINN)<br />FEDER<br />Aragon Regional Government<br />CSIC<br />Depto. de Física de Materiales<br />Fac. de Ciencias Físicas<br />TRUE<br />pub
Details
- Database :
- OAIster
- Notes :
- application/pdf, 0003-6951, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1450541255
- Document Type :
- Electronic Resource