Cite
Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)
MLA
Schlykow, V., et al. Selective Growth of Fully Relaxed GeSn Nano-Islands by Nanoheteroepitaxy on Patterned Si(001). 2016. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1472558472&authtype=sso&custid=ns315887.
APA
Schlykow, V., Klesse, W., Niu, G., Taoka, N., Yamamoto, Y., Skibitzki, O., Barget, M., Zaumseil, P., von Känel, H., Schubert, M., Capellini, G., Schroeder, T., Schroeder, T., & Barget, M. R. (2016). Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001).
Chicago
Schlykow, V, W Klesse, G Niu, N Taoka, Y Yamamoto, O Skibitzki, M Barget, et al. 2016. “Selective Growth of Fully Relaxed GeSn Nano-Islands by Nanoheteroepitaxy on Patterned Si(001).” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1472558472&authtype=sso&custid=ns315887.