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The current-induced spin-orbit torques (SOTs) in the perpendicularly magnetized Ir22Mn78/Co20Fe60B20/MgO structures are investigated. The damping- and field-like torques are characterized using a harmonic technique. The spin Hall angle of Ir22Mn78 is determined to be θSHE = +0.057 ± 0.002. The SOT-driven magnetization switching is also demonstrated with the assistance of an external in-plane field. Furthermore, the magneto-optical Kerr effect imaging experiments show that the magnetization switching is realized through domain nucleation and domain wall motion. These results may promise potential practical applications in high-performance SOT devices based on the antiferromagnetic materials. [ABSTRACT FROM AUTHOR]

We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co40Fe40B20 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes. [ABSTRACT FROM AUTHOR]

We study voltage-controlled magnetic anisotropy (VCMA) and other magnetic properties in annealed MojCoFeBjMgO layered structures. The interfacial perpendicular magnetic anisotropy (PMA) is observed to increase with annealing over the studied temperature range, and a VCMA coefficient of about 40 fJ/V-m is sustained after annealing at temperatures as high as 430 °C. Ab initio electronic structure calculations of interfacial PMA as a function of strain further show that strain relaxation may lead to the increase of interfacial PMA at higher annealing temperatures. Measurements also show that there is no significant VCMA and interfacial PMA dependence on the CoFeB thickness over the studied range, which illustrates the interfacial origin of the anisotropy and its voltage dependence, i.e., the VCMA effect. The high thermal annealing stability of MojCoFeBjMgO structures makes them compatible with advanced CMOS back-end-of-line processes, and will be important for integration of magnetoelectric random access memory into on-chip embedded applications. [ABSTRACT FROM AUTHOR]

We study the effect of the oxide layer on current-induced perpendicular magnetization switching properties in Hf|CoFeB|MgO and Hf|CoFeB|TaOx tri-layers. The studied structures exhibit broken in-plane inversion symmetry due to a wedged CoFeB layer, resulting in a field-like spin-orbit torque (SOT), which can be quantified by a perpendicular (out-of-plane) effective magnetic field. A clear difference in the magnitude of this effective magnetic field (HzFL) was observed between these two structures. In particular, while the current-driven deterministic perpendicular magnetic switching was observed at zero magnetic bias field in Hf|CoFeB|MgO, an external magnetic field is necessary to switch the CoFeB layer deterministically in Hf|CoFeB|TaOx. Based on the experimental results, the SOT magnitude (HzFL per current density) in Hf|CoFeB|MgO (-14.12Oe/107 A cm-2) was found to be almost 13× larger than that in Hf|CoFeB|TaOx (-1.05Oe/107 A cm-2). The CoFeB thickness dependence of the magnetic switching behavior, and the resulting HzFL generated by in-plane currents are also investigated in this work. [ABSTRACT FROM AUTHOR]

The article presents a study focusing on strain-induced modulation of perpendicular magnetic anisotropy (PMA) in tantalum(Ta)/cobalt iron boron (CoFeB)/magnesium oxide (MgO) structures investigated by ferromagnetic resonance. The findings include strain-induced change in PMA extracted from the experimental ferromagnetic resonance (FMR) spectra, modulation of the PMA of an ultrathin CoFeB layer by voltage-induced strain and dependence of the effective damping constant as a function of strain.

Conventional semi-infinite analytical solutions of correlation diffusion equation may lead to errors when calculating blood flow index (BFI) from diffuse correlation spectroscopy (DCS) measurements in tissues with irregular geometries. Very recently, we created an algorithm integrating a Nth-order linear model of autocorrelation function with the Monte Carlo simulation of photon migrations in homogenous tissues with arbitrary geometries for extraction of BFI (i.e., αDB). The purpose of this study is to extend the capability of the Nth-order linear algorithm for extracting BFI in heterogeneous tissues with arbitrary geometries. The previous linear algorithm was modified to extract BFIs in different types of tissues simultaneously through utilizing DCS data at multiple source-detector separations. We compared the proposed linear algorithm with the semi-infinite homogenous solution in a computer model of adult head with heterogeneous tissue layers of scalp, skull, cerebrospinal fluid, and brain. To test the capability of the linear algorithm for extracting relative changes of cerebral blood flow (rCBF) in deep brain, we assigned ten levels of αDB in the brain layer with a step decrement of 10% while maintaining αDB values constant in other layers. Simulation results demonstrate the accuracy (errors < 3%) of high-order (N ≥ 5) linear algorithm in extracting BFIs in different tissue layers and rCBF in deep brain. By contrast, the semi-infinite homogenous solution resulted in substantial errors in rCBF (34.5% ≤ errors ≤ 60.2%) and BFIs in different layers. The Nth-order linear model simplifies data analysis, thus allowing for online data processing and displaying. Future study will test this linear algorithm in heterogeneous tissues with different levels of blood flow variations and noises. [ABSTRACT FROM AUTHOR]

We study the current-driven perpendicular magnetization switching in Ta/CoFeB(wedge)/[TaOx or MgO/TaOx] devices with a lateral structural asymmetry introduced by a varying CoFeB thickness. In these devices, an in-plane current can generate a field-like torque and its corresponding effective magnetic field (HzFL) is out-of-plane, which can deterministically switch perpendicular magnetiza-tion at zero magnetic field. Experimental results indicate that the method used for breaking lateral structural symmetry greatly affects the resulting field-like torque, and that the gradient of perpen-dicular anisotropy, resulting from the CoFeB thickness variation, is not by itself sufficient to give rise to the current-induced HzFL. Analysis of the oxidation gradient at the CoFeB/TaOx interface indicates that the oxidation gradient may play a more important role than the gradient of magnetic anisotropy for the generation of HzFL. For practical applications, the demonstration of perpendicular magnetization switching in Ta/CoFeB(wedge)/MgO/TaOx devices potentially allows for using MgO-based magnetic tunnel junctions for readout in three-terminal memory devices without the need for external magnetic fields [ABSTRACT FROM AUTHOR]

The anomalous Nernst effect in a perpendicularly magnetized Ir22Mn78/Co20Fe60B20/MgO thin film is measured using well-defined in-plane temperature gradients. The anomalous Nernst coefficient reaches 1.8 μV/K at room temperature, which is almost 50 times larger than that of a Ta/Co20Fe60B20/MgO thin film with perpendicular magnetic anisotropy. The anomalous Nernst and anomalous Hall results in different sample structures revealing that the large Nernst coefficient of the Ir22Mn78/Co20Fe60B20/MgO thin film is related to the interface between CoFeB and IrMn. [ABSTRACT FROM AUTHOR]

We study the heavy metal layer thickness dependence of the current-induced spin-orbit torque (SOT) in perpendicularly magnetized Hf∣CoFeB∣MgO multilayer structures. The damping-like (DL) current-induced SOT is determined by vector anomalous Hall effect measurements. A nonmonotonic behavior in the DL-SOT is found as a function of the thickness of the heavy-metal layer. The sign of the DL-SOT changes with increasing the thickness of the Hf layer in the trilayer structure. As a result, in the current-driven magnetization switching, the preferred direction of switching for a given current direction changes when the Hf thickness is increased above ∼7 nm. Although there might be a couple of reasons for this unexpected behavior in DL-SOT, such as the roughness in the interfaces and/or impurity based electric potential in the heavy metal, one can deduce a roughness dependence sign reversal in DL-SOT in our trilayer structure. [ABSTRACT FROM AUTHOR]

We study the effect of the oxide layer on the current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Hf|CoFeB|MgO (MgO-capped) or Hf|CoFeB|TaOx (TaOx-capped) structures. The effective fields corresponding to both the field-like and damping-like current-induced SOTs are characterized using electric transport measurements. Both torques are found to be significantly stronger in MgO-capped structures than those in TaOx-capped structures. The difference in fieldlike and damping-like SOTs in the different structures may be attributed to the different Rashbalike Hamiltonian, arising from the difference in the electric potential profiles across the oxide| ferromagnet interfaces in the two cases, as well as possible structural and oxidation differences in the underlying CoFeB and Hf layers. Our results show that the oxide layer in heavymetal |ferromagnet|oxide trilayer structures has a very significant effect on the generated SOTs for manipulation of ferromagnetic layers. These findings could potentially be used to engineer SOT devices with enhanced current-induced switching efficiency. [ABSTRACT FROM AUTHOR]

In this work, we experimentally study the temperature dependence of the perpendicular magnetic anisotropy (PMA) and of the voltage-controlled magnetic anisotropy (VCMA) in nanoscale MgO|CoFeB|Ta-based magnetic tunnel junctions. We demonstrate that the temperature dependences of both the PMA and the VCMA coefficient follow power laws of the saturation magnetization, but with different exponents. We also find that the linear dependence of the PMA on electric field is maintained over a wide temperature range, although the VCMA strength decreases faster as a function of temperature as compared to the PMA. Possible mechanisms leading to the different exponents are discussed. [ABSTRACT FROM AUTHOR]

We studied the impact of different insertion layers (Ta, Pt, and Mg) at the CoFeB∣MgO interface on voltage-controlled magnetic anisotropy (VCMA) effect and other magnetic properties. Inserting a very thin Mg layer of 0.1-0.3 nm yielded a VCMA coefficient of 100 fJ/V-m, more than 3 times higher than the average values of around 30 fJ/V-m reported in Ta∣CoFeB∣MgO-based structures. Ta and Pt insertion layers also showed a small improvement, yielding VCMA coefficients around 40 fJ/V-m. Electrical, magnetic, and X-ray diffraction results reveal that a Mg insertion layer of around 1.2 nm gives rise to the highest perpendicular magnetic anisotropy, saturation magnetization, as well as the best CoFe and MgO crystallinity. Other Mg insertion thicknesses give rise to either under- or over-oxidation of the CoFe∣MgO interface; a strong over-oxidation of the CoFe layer leads to the maximum VCMA effect. These results show that precise control over the Mg insertion thickness and CoFe oxidation level at the CoFeB∣MgO interface is crucial for the development of electric-field-controlled perpendicular magnetic tunnel junctions with low write voltage. [ABSTRACT FROM AUTHOR]

We study the magnetic properties of W/Co40Fe40B20 (CoFeB)/MgO films using the spin-torque ferromagnetic resonance (ST-FMR) technique. This study takes the advantage of the spin Hall magnetoresistance (SMR) for generating an oscillating resistance, which is one of the necessary requirements for obtaining mixing voltage in the ST-FMR technique. We have measured both the as-grown and the annealed samples with different CoFeB layer thicknesses, which include the in-plane and out-of-plane magnetic anisotropies. The spectra for these two types of anisotropies show distinct signatures. By analyzing the ST-FMR spectra, we extract the effective anisotropy field for both types of samples. In addition, we investigate the influence of CoFeB thickness and annealing on the Gilbert damping constant. Our experiments show that by taking advantage of SMR, the ST-FMR measurement acts as an effective tool with high sensitivity for studying the magnetic properties of ultrathin magnetic films. [ABSTRACT FROM AUTHOR]

Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction(MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ~40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices. [ABSTRACT FROM AUTHOR]

Conventional semi-infinite solution for extracting blood flow index (BFI) from diffuse correlation spectroscopy (DCS) measurements may cause errors in estimation of BFI (αDB) in tissues with small volume and large curvature. We proposed an algorithm integrating Nth-order linear model of autocorrelation function with the Monte Carlo simulation of photon migrations in tissue for the extraction of αDB. The volume and geometry of the measured tissue were incorporated in the Monte Carlo simulation, which overcome the semi-infinite restrictions. The algorithm was tested using computer simulations on four tissue models with varied volumes/geometries and applied on an in vivo stroke model of mouse. Computer simulations shows that the high-order (N≥5) linear algorithm was more accurate in extracting αDB (errors<±2%) from the noise-free DCS data than the semi-infinite solution (errors: -5.3% to -18.0%) for different tissue models. Although adding random noises to DCS data resulted in αDB variations, the mean values of errors in extracting αDB were similar to those reconstructed from the noise-free DCS data. In addition, the errors in extracting the relative changes of αDB using both linear algorithm and semi-infinite solution were fairly small (errors<±2.0%) and did not rely on the tissue volume/geometry. The experimental results from the in vivo stroke mice agreed with those in simulations, demonstrating the robustness of the linear algorithm. DCS with the high-order linear algorithm shows the potential for the inter-subject comparison and longitudinal monitoring of absolute BFI in a variety of tissues/organs with different volumes/geometries. [ABSTRACT FROM AUTHOR]

This study extended our recently developed noncontact diffuse correlation spectroscopy flowmetry system into noncontact diffuse correlation tomography (ncDCT) for three-dimensional (3-D) flow imaging of deep tissue. A linear array of 15 photodetectors and two laser sources connected to a mobile lens-focusing system enabled automatic and noncontact scanning of flow in a region of interest. These boundary measurements were combined with a finite element framework for DCT image reconstruction implemented into an existing software package. This technique was tested in computer simulations and using a tissue-like phantom with anomaly flow contrast design. The cylindrical tube-shaped anomaly was clearly reconstructed in both simulation and phantom. Recovered and assigned flow contrast changes in anomaly were found to be highly correlated: regression slope=1.00, R²=1.00, and p<10-5 in simulation and regression slope≥0.97, R²≥0.96, and p<10-3 in phantom. These results exhibit promise of our ncDCT technique for 3-D imaging of deep tissue blood flow heterogeneities. [ABSTRACT FROM AUTHOR]