Search

Investigates the formation of cobalt-silicon films by the reaction of ternary cobalt/titanium/silicon system. Sequential deposition of cobalt films deposited on silicon substrates by ion beam sputtering; Success of the deposition in the growth of epitaxial single-crystalline cobalt-silicon films on both silicon and silicon substrates; Formation of thin layer of titanium-nitrogen on top of the epitaxial cobalt-silicon.

Presents a study that examined the solid state reaction of cobalt-titanium with an epitaxially grown silicon-germanium strained layer. Use of rapid thermal annealing system; Measurement of electrical resistivity and Hall effect of the compound; Background of crystalline silicon-germanium.