Search

Investigates the formation of cobalt-silicon films by the reaction of ternary cobalt/titanium/silicon system. Sequential deposition of cobalt films deposited on silicon substrates by ion beam sputtering; Success of the deposition in the growth of epitaxial single-crystalline cobalt-silicon films on both silicon and silicon substrates; Formation of thin layer of titanium-nitrogen on top of the epitaxial cobalt-silicon.

Presents a study which investigated the electrical transport properties of CoSi[sub2] and Co(Si[subx]Ge[sub1-x])2 films formed by different methods. Properties of the thin films after low temperature annealing; Discussion on the hole carrier density of the samples studied; Characteristic of CoSi[sub2] which made it a desirable material for contact and gate level interconnection of large scale integrated circuits.

Examines the Hall effect data of the bismuth-strontium-calcium-copper-oxygen thin films samples. Information on the thin film samples; Methodology of the study; Results and discussion.

Presents a study which measured the electrical resistivity and Hall effect of TiSi[sub2] thin films. Materials and methods used; Description of the temperature dependence of resistivity of TiSi[sub2] thin film; Overview of the Hall effect of TiSi[sub2] thin film formed on single crystal silicon.

The effects of annealing ambient on the structural and transport properties of epitaxial La0.7 Ba0.3MnO3 films suffering large compressive strain on LaAlO3 substrates (LBMO/LAO) have been investigated. Independent of oxygen or argon ambient, a high temperature (900 °C) post-annealing process leads to a c-axis contraction, which can be attributed to the oxygen transfer from the in-plane to the out-of-plane direction. Meanwhile, the transport properties are similar with each other for both the Ar-annealed and O2-annealed films. The comparison of the ambient annealing effects between the highly strained LBMO/LAO films and negligibly strained LBMO films on SrTiO3 substrates indicates that a large in-plane compressive strain favors decreasing oxygen deficiency in the films, especially in the ab-plane. [ABSTRACT FROM AUTHOR]

The magnetocrystalline anisotropy of La0.67Ba0.33MnO3 (LBMO) epitaxial films suffering large compressive strain on LaAlO3 (LAO) substrates (LBMO/LAO) was investigated by ferromagnetic resonance (FMR) in the temperature range between 2 and 320 K. By mapping out the dependence of the FMR position on the angle between the applied magnetic field and crystallographic axes of the films, a large easy-plane anisotropy has been found in such compressive strained LBMO films, which is in contrast to the general tendency presented in strained manganite films. Furthermore, the excellent epitaxial crystallographic orientation due to the LAO substrates gives rise to an appreciable fourfold symmetry of the in-plane anisotropy with easy-axis along the [110] direction. The results are discussed by taking tolerance factor and giant magnetostriction of Ba-doped manganites into account. [ABSTRACT FROM AUTHOR]

Epitaxial growth of CoSi[sub 2] by solid state reaction of Co/a-Si/Ti/Si(100) is investigated. A Ti/a-Si composite interlayer is used to modify the diffusion barrier and influence the epitaxial growth process. The epitaxial quality of the CoSi[sub 2] is improved compared to the film grown by Co/Ti/Si reaction. A multielement amorphous layer is formed by a solid-state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si while limiting the supply of Co atoms. CoSi[sub 2] grows as the first phase and the growth interface of the epitaxial CoSi[sub 2] is at both the CoSi[sub 2]/Si and CoSi[sub 2]/CoSi interfaces. Investigation of the growth kinetics shows that the activation energy of CoSi[sub 2] formation is larger than that without an amorphous Si layer. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Focuses on visible electroluminescence from semitransparent gold film/extra thin silicon-rich silicon oxide (SiO) film/p-Si diodes at room temperature. Use of the magnetron sputtering technique; Types of luminescence centers in the SiO films; Visible light emitted by electron-hole pairs.