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Focuses on electron trapping during high-field tunneling injection on metal-oxide-silicon capacitors as a function of gate-induced strain. Importance of the shift in the threshold voltage caused by the trapping of electrons in the oxide layer; Experimental devices used; Strain field in the oxide and its effect on electron trapping.

Describes a method by which the Schwartz-Christoffel transformation has been applied to the metal-oxide-semiconductor capacitor structure in order to calculate the high-field tunneling current in such a device. Features of the generalized model of the capacitor; Description of high field enhancement factors; Mechanism of high-field tunneling into silicon dioxide.