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A tapered thin film of Ta2O5 was deposited by the masked sputtering method on a single-mode slab glass waveguide to form a composite optical waveguide (COWG) with a great modal birefringence. With the prism-coupling method the COWG was used as an integrated polarimetric interferometer for real-time detection of chemical and biological measurands. The refractive-index sensitivity of the interferometer was examined, and the refractive-index increments of different aqueous solutions were determined with the device. Response of the interferometer to protein adsorption and that to water temperature were investigated. The experimental results indicate that an increase of DT = 1degC for the temperature of water in the measuring chamber can lead to a phase-difference change of Dph = [?]28.5deg. [ABSTRACT FROM AUTHOR]

A simple and stable loop consisting of a pair of concatenated electroabsorption modulators (EAMs) and 10 GHz clock recovery module is presented and demonstrated experimentally for simultaneous demultiplexing and clock recovery for OTDM networks. The 10Gb/s demultiplexed signal and 10 GHz recovered clock are successfully implemented from 80 Gbit/s and 160 Gbit/s OTDM signals utilizing the loop. The loop based on EAM-PLL can provide excellent tolerance range (> 5 dB) of the OSCR of the source laser, and the recovered clock signal exhibits low rms jitter over a dynamic input optical power range of 15 dB. [ABSTRACT FROM AUTHOR]

We report 10 Gb/s data transmissions using a packaged two-section InGaAsP/InP distributed Bragg reflector (DBR) laser. The tunable DBR laser has a wavelength tuning range of 12.12 nm. The DBR laser has greater than 10.84 GHz 3-dB direct modulation bandwidth within the wavelength tuning range. The 10 Gb/s data transmissions are performed at up to a distance of 30-km. [ABSTRACT FROM AUTHOR]

Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry—Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165 mW is obtained for a 1-mm-long uncoated laser. [ABSTRACT FROM AUTHOR]

A four-channel 400 GHz channel spacing InP-based arrayed waveguide grating with a flattened wavelength response by employing a multimode interference coupler at the input waveguide of the filter is prepared. The fabricated devices show a flattened spectral response with a broadened 3-dB bandwidth up to 3.5 nm, interchannel non-uniformity of <0.7 dB and excellent match to the simulation results. [ABSTRACT FROM AUTHOR]

A novel scheme of all-optical clock recovery from mutiwavelength non-return-to-zero (NRZ) data stream is proposed and demonstrated. The chirp induced by a chirped fibre Bragg grating and a semiconductor optical amplifier is used to enhance the clock. The clock is recovered after injecting the enhanced signal into the scheme based on the stimulated Brillouin scattering. The experiment is carried out and the dual-wavelength clock is recovered. This novel scheme can realize clock recovery of multiwavelength NRZ signal in the total wavelength range of 3.3 nm. This clock recovery technology is transparent to the data bit rate and modulation format, also without pattern dependence. [ABSTRACT FROM AUTHOR]

We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well (MQW) electro-absorption modulators (EAMs). In this work, the quantum confined Stark effect of the EAM is systematically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet. Then 1.3-μm InGaAsP/InP EAMs with f−3 dB bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated. [ABSTRACT FROM AUTHOR]

Internal loss is a key internal parameter for high power 1060-nm InGaAs/AlGaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum well (QW) AlGaAs separate confinement heterostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively. [ABSTRACT FROM AUTHOR]

A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13 mA. The output power exceeds 10 mW at 0 V bias when the injection current of the distributed feedback laser is 100 mA at 25°C. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.5Vpp nonreturn-to-zero pseudorandom modulation signal at −2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained. [ABSTRACT FROM AUTHOR]