1. p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications.
- Author
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Ng, Yat Hon, Zheng, Zheyang, Zhang, Li, Liu, Ruizi, Chen, Tao, Feng, Sirui, Shao, Qiming, and Chen, Kevin J.
- Subjects
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MODULATION-doped field-effect transistors , *TWO-dimensional electron gas , *HETEROJUNCTIONS , *GALLIUM nitride - Abstract
In this work, we manifest that the epitaxial structure for p-GaN gate high-electron-mobility transistor is a versatile platform to develop electronics for operating in an extremely wide temperature range (X-WTR) from 2 to 675 K, with comprehensive X-WTR studies on device operation and circuit behaviors. The key enabler for the high-temperature operation is the wide bandgap that substantially suppresses the thermal excitation of the intrinsic carrier. However, for the low-temperature side, the two-dimensional electron and hole gas (2DEG and 2DHG) channels at the heterojunctions are formed by the temperature-insensitive polarization fields, which free the carriers from freezing out. The monolithically integrated GaN n-FET, p-FET, and the resultant complementary circuits are, therefore, shown to operate in X-WTR. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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