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Focuses on electron trapping during high-field tunneling injection on metal-oxide-silicon capacitors as a function of gate-induced strain. Importance of the shift in the threshold voltage caused by the trapping of electrons in the oxide layer; Experimental devices used; Strain field in the oxide and its effect on electron trapping.

Describes a method by which the Schwartz-Christoffel transformation has been applied to the metal-oxide-semiconductor capacitor structure in order to calculate the high-field tunneling current in such a device. Features of the generalized model of the capacitor; Description of high field enhancement factors; Mechanism of high-field tunneling into silicon dioxide.

It is shown that the generation of interface traps by Fowler–Nordheim injection, like those generated by ionizing radiation, is a function of the mechanical strain at the silicon-silicon dioxide interface. However, because of the current enhancement at the edge of a metal-oxide-semiconductor gate when the gate serves as the hot-electron injector, this phenomenon may only be evident when the device is stressed with the gate biased positively. It is also shown that the capture rate of electrons in the silicon dioxide depends on the strain in the film. [ABSTRACT FROM AUTHOR]

The spatial distribution of the electric field in a metal-oxide-silicon structure with finite gate dimensions is calculated and used to determine the current expected in the Fowler-Nordheim tunneling regime. The theoretical analysis predicts a greatly enhanced perimeter current when the gate acts as the cathode. In contrast, the edge of the gate does not significantly influence the current when the silicon substrate acts as the cathode. Experimental results are in qualitative agreement with the above expectation. [ABSTRACT FROM AUTHOR]