Search

Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry—Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165 mW is obtained for a 1-mm-long uncoated laser. [ABSTRACT FROM AUTHOR]

A novel scheme of all-optical clock recovery from mutiwavelength non-return-to-zero (NRZ) data stream is proposed and demonstrated. The chirp induced by a chirped fibre Bragg grating and a semiconductor optical amplifier is used to enhance the clock. The clock is recovered after injecting the enhanced signal into the scheme based on the stimulated Brillouin scattering. The experiment is carried out and the dual-wavelength clock is recovered. This novel scheme can realize clock recovery of multiwavelength NRZ signal in the total wavelength range of 3.3 nm. This clock recovery technology is transparent to the data bit rate and modulation format, also without pattern dependence. [ABSTRACT FROM AUTHOR]

Internal loss is a key internal parameter for high power 1060-nm InGaAs/AlGaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum well (QW) AlGaAs separate confinement heterostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively. [ABSTRACT FROM AUTHOR]