1. p-GaN Selective Nitridation to Obtain a Normally Off p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors.
- Author
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Shaoqian Lu, Guohao Yu, Yingfei Sun, Xu Yuan, Zhongkai Du, Bingliang Zhang, Lu Wang, Yu Li, Dongdong Wu, Zengli Huang, Zhongming Zeng, Xulei Qin, and Baoshun Zhang
- Subjects
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MODULATION-doped field-effect transistors , *TWO-dimensional electron gas , *GALLIUM nitride , *NITRIDATION , *X-ray photoelectron spectroscopy , *NITROGEN plasmas - Abstract
In this article, a method of nitrogen plasma treatment is proposed to achieve normally off p-GaN/AlGaN/GaN high-electron-mobility transistors, and the related mechanism is proposed. A nitrogen plasma treatment is employed to deplete holes in the p-GaN layer to change the surface characteristics. The transition of the p-GaN layer from p-type to n-type results in the formation of the 2D electron gas at the AlGaN/GaN interface. The X-ray photoelectron spectroscopy (XPS) testing and the fitting of mechanism for reverse gate leakage current both imply that the nitrogen plasma treatment has a beneficial effect on the surface condition. The device exhibits enhanced performance, with threshold voltage of 1.1 V, on/off ratio of 1 x 109, maximum drain current of 245 mAmm-1, and breakdown voltage of 1215 V. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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