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Your search keyword '"Guohao Yu"' showing total 11 results

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11 results on '"Guohao Yu"'

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1. p-GaN Selective Nitridation to Obtain a Normally Off p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors.

2. 16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator.

3. 12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis.

4. Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment.

5. Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT.

6. High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition.

7. Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs.

8. Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111).

9. 10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current.

10. Spin–orbit torques in GaN/NiFe bilayers.

11. 5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing.

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