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5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing.
- Source :
-
Electronics Letters (Wiley-Blackwell) . 1/31/2013, Vol. 49 Issue 3, p20-21. 2p. 1 Color Photograph, 1 Diagram, 2 Graphs. - Publication Year :
- 2013
-
Abstract
- Normally-off AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) on Si substrate were fabricated with the fluorine-based treatment technique. By employing a 20nmthick Al2O3 gate dielectric deposited by atomic layer deposition, the fabricated MOS-HEMT exhibits a large positive threshold voltage of + 3.5V, a maximum gate input voltage of 15V, a maximum saturate drain current of 5.3A and an off-state breakdown voltage of 402V. The high threshold voltage and the large input voltage swing is expected to improve the electromagnetic interference immunity and safety of AlGaN/GaN MOS-HEMT power switches. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 49
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Wiley-Blackwell)
- Publication Type :
- Academic Journal
- Accession number :
- 101572892
- Full Text :
- https://doi.org/10.1049/el.2012.3153