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Your search keyword '"Hughes, O. H."' showing total 2 results
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2 results on '"Hughes, O. H."'

1. Subnanosecond far infrared photoconductivity from a GaAs/AlGaAs multiquantum well.

Author

de Bekker, R. E. M., Chamberlain, J. M., Claessen, L. M., Wyder, P., Stanaway, M. B., Grimes, R. T., Henini, M., Hughes, O. H., and Hill, G.

Subjects
*GALLIUM arsenide, *QUANTUM wells, *PHOTOCONDUCTIVITY, *SPECTRUM analysis, *ELECTRONS
Abstract

Presents a study that investigated the far infrared photoconductivity of gallium arsenide (GaAs)/AlGaAs multiquantum wells (MQW) doped with silicon. Information on the binding energy of an electron to a hydrogen like impurity in an MQW; Details of the continuous wave magnetospectroscopy measurement; Assessment of the time-resolved response of an MQW specimen to short impulses.

Published
1990
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2. Sequential tunneling due to intersubband scattering in double-barrier resonant tunneling devices.

Author

Eaves, L., Toombs, G. A., Sheard, F. W., Payling, C. A., Leadbeater, M. L., Alves, E. S., Foster, T. J., Simmonds, P. E., Henini, M., Hughes, O. H., Portal, J. C., Hill, G., and Pate, M. A.

Subjects
*OSCILLATIONS, *QUANTUM tunneling, *GALLIUM arsenide
Abstract

Magnetoquantum oscillations in the tunnel current of double-barrier n-GaAs/(AlGa)As/GaAs/(AlGa)As/GaAs resonant tunneling devices reveal evidence of sequential tunneling in the voltage range corresponding to the resonance when electrons tunnel into the second subband of the GaAs quantum well. The sequential tunneling arises from intersubband scattering between two quasi-bound states of the well. Near this resonance, the charge buildup in the well can be estimated from the magnetoquantum oscillations. [ABSTRACT FROM AUTHOR]

Published
1988
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