1. Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors.
- Author
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Jaechul Park, Ihun Song, Kim, Sunil, Sangwook Kim, Changjung Kim, Jaecheol Lee, Hyungik Lee, Eunha Lee, Huaxiang Yin, Kyoung-Kok Kim, Kee-Won Kwon, and Youngsoo Park
- Subjects
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ZINC oxide thin films , *ZINC oxide , *GALLIUM , *INDIUM , *FIELD-effect transistors , *ARGON plasmas , *MOLYBDENUM , *OHMIC contacts - Abstract
We have demonstrated a self-aligned top-gate amorphous gallium indium zinc oxide thin film transistor (a-GIZO TFT). It had a field effect mobility of 5 cm2/V s, a threshold voltage of 0.2 V, and a subthreshold swing of 0.2 V/decade. Ar plasma was treated on the source/drain region of the a-GIZO active layer to reduce the series resistance. After Ar plasma treatment, the surface of the source/drain region was divided into In-rich and In-deficient regions. The a-GIZO TFT also had a constant sheet resistance of 1 kΩ/□ for a film thickness of over 40 nm. The interface between the source/drain Mo metal and the Ar plasma-treated a-GIZO indicated a good Ohmic contact and a contact resistivity of 50 μΩ cm2. [ABSTRACT FROM AUTHOR]
- Published
- 2008
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