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Pure CeO2 and Ni-doped cerium oxide (NDC) films were deposited by a facile and economic jet nebulizer spray pyrolysis (JNSP) process at 450 ºC substrate temperature. Here, efforts have been done to enhance the performance of the NDC diode using various doping concentrations of Ni (0, 2, 4, and 6 wt%). X-ray diffraction revealed polycrystalline film formation with a cubic crystal structure and the crystallite size of CeO2 was increased from 10 to 21 nm on Ni doping. EDX study confirms the presence of Ni in NDC films. FESEM explicitly shows fine spherical grains-like morphology. The optical studies indicate the reduction in the bandgap of CeO2 from 3.30 to 2.86 eV on Ni doping. The Photoluminescence (PL) spectrum proves that the oxygen vacancy is created in the CeO2 thin films while doping with Ni which leads to the blue shift and intensity enhancement of emission peak. NDC film prepared with 6 wt% showed a higher electrical conductivity ~ 3.76 × 10–10 S/cm which indicates that it is suitable for photodiode fabrication. The fabricated p-Si/n-NDC photodiode works with superior parameters like ideality factor (n) and barrier height (ΦB) under dark and illuminated conditions. The saturation current (Io) of the p-Si/n-NDC diode is varied from ~ 2.69 × 10–05 to 6.57 × 10–04 A with Ni concentrations. The estimated n and ΦB values of the p-Si/n-NDC junction diode are found to be decreased from 7.6 to 2.5 and 0.72 to 0.60 eV. These outcomes indicate that the fabricated photodiode is a useful element in optoelectronic devices. [ABSTRACT FROM AUTHOR]

Monoclinic WO3-nanoplate arrays have been effectively deposited via simple jet nebulizer spray pyrolysis technique at an optimized substrate temperature of 400 °C. These WO3-nanoplate arrays were used as an insulating layer in the metal–insulator–semiconductor (MIS) structure based Schottky barrier diodes. The effect of WO3 mol concentration during the deposition process was systematically interpreted with respect to the structural, morphological, optical and electrical properties of WO3-nanoplate array films. XRD pattern exposed the polycrystalline nature of the prepared films with a monoclinic phase. At higher concentration of 0.25 M WO3-nanoplates were firmly interconnected together and has been analyzed by a FE-SEM. From UV–Vis spectroscopy, the band gap values of the WO3 were found to vary from 3.2 to 3.4 eV with mole concentrations. DC electrical study recorded a steep increase in the electrical conductivity for the film prepared with 0.2 M of WO3. Notably, all the diodes exhibited positive photoresponse under illumination. Particularly, the MIS diode fabricated with 0.2 M revealed higher photoresponsivity and sensitivity of 960.85% and 33.40 mA W−1 respectively. [ABSTRACT FROM AUTHOR]

The effect of variant high boiling point solvent combinations in the synthesis and photo-sensing characteristics of tin disulfide (SnS2) thin nanosheets were investigated. Solvent dependent single-phase formation was observed by powder X-ray diffractometry (XRD), and results were verified with Raman spectroscopy measurements. Particles synthesized with only oleylamine show a mixed-phase, and two other solvent combinations such as oleylamine + oleic acid + n-octadecene, and oleylamine + oleic acid, show single-phase 2H–SnS2, without phase contamination. Scanning and transmission electron microscopes were used to verify the orbicular and hexagonal shape of synthesized SnS2 nanosheets. Well-characterized samples were employed to fabricate heterojunction photosensitive diodes using a p-type silicon substrate. Light-responsive measurement results of fabricated diodes indicate that the oleylamine + oleic acid synthesized sample show very high light-sensitivity, and the fill factor value of a fabricated diode is closer to the ideal diode. [ABSTRACT FROM AUTHOR]

Abstract Here, we fabricated highly sensitive metal-insulator-semiconductor (MIS) type diodes with positive photo-response by introducing a polycrystalline Ce-WO 3 composite thin films as an interfacial layer (IL) between the metal (Cu) and semiconductor (p-Si). Ce-WO 3 films were successfully grown on a quartz substrate through JNSP technique with 0, 4, 8 and 12 wt% of Ce on an optimized substrate temperature of 400 °C. Polycrystalline Ce-WO 3 films with mono-phase of monoclinic crystal structure were observed in XRD analysis, in which the mean crystallite size of the films were found to dwindle and their corresponding lattice parameters improved with Ce concentration. Randomly arranged rectangular shaped nanoplate-like surface morphology was observed through FESEM. From AFM study, the observed surface roughness of the films was found to be varying between 183 and 116 nm. Incorporation of Ce atoms in WO 3 matrix facilitated better optical absorption and minimized E g values which was studied using UV–vis spectrum. Current-voltage (I-V) characteristics exhibit highest σ dc with low ρ and E a values for higher concentration of Ce. For Cu/Ce-WO 3 /p-Si type diodes, as the light intensity of the diodes increased from 0 to 130 mW/cm2 their corresponding ideality factor (n) was found to decrease. Moreover, significant photodiode parameters like P S , R, QE (%) and D* enhanced with Ce and in particular the MIS diode fabricated with its 12 wt% showed better results in which a remarkable responsivity of 20.61 mA/W was recorded. Graphical abstract Unlabelled Image Highlights • Ultra-fast photoresponse and high sensitive based MIS type diodes have been fabricated by a simple JNSP technique. • The nanoplate-like surface morphology was observed through FESEM analysis. • The MIS diode fabricated with 12 wt% showed high responsivity of 20.61 mA/W. • High photosensitivity of P S = 17,509.62% and a maximum quantum efficiency of QE = 9.72% were obtained at 130 mW/cm2. • The fabricated Cu/Ce-WO 3 /p-Si type diode will be ideal for UV photodetector application. [ABSTRACT FROM AUTHOR]

In this work, two different structure of Cu/Sr-WO 3 /p-Si metal-insulator-semiconductor (MIS) and Cu/Sr-WO 3 /FTO metal-insulator-metal (MIM) Schottky barrier diodes (SBDs) fabricated with an insulating layer of pure tungsten trioxide (WO 3 ) and Sr-WO 3 thin films have been reported. The Sr-WO 3 layer was coated separately, with different concentrations (0, 4, 8 and 12 wt %) of strontium (Sr) via jet nebulizer spray pyrolysis technique (JNSP) on the p-type silica wafer (p-Si) and fluorine doped tin oxide (FTO) substrates which are been optimized at 400 °C. The XRD analysis reveals the multiphase crystalline structures for 12 wt % of Sr-WO 3 film with higher average crystallite size. FE-SEM images show the randomly oriented sub-microsized slab and seashell like structures. Higher surface roughness with improved grain size for 12 wt % of Sr-WO 3 film. The presence of W, O and Sr atoms was confirmed by EDX spectra. In optical studies, Maximum absorption with minimum optical band gap was observed for 12 wt % of Sr-WO 3 composite film. There was a linear increase in the electrical conductivity of the films with higher wt. % of Sr. Evidently the activation energy decreased with Sr concentration which is in accordance with the bandgap values. The fitting results of the measured I-V, reveal that MIS (SBDs) under illumination condition have minimum ideality factor (n = 2.39) and maximum barrier height (Φ b  = 0.57) values for higher concentration (12 wt %) of Sr film compared to MIM SBDs. [ABSTRACT FROM AUTHOR]

[Display omitted] • For the first time, facile spin coating technique is employed to fabricate Ga doped novel WO 3 films and n-Ga@WO 3 /p-Si heterojunction diode by keeping their optoelectronic applications point of view. • X-ray diffraction study reveals the orthorhombic structure of WO 3 at all Ga contents and also Ga presence was approved. • EDX study confirm the presence of Ga in WO 3 films. • SEM study shows that the morphology of WO 3 is remarkably transformed from nanoplates to fine nano-leaves with some agglomeration when Ga is doped. • Enhancement in electrical conductivity was observed with temperature as well as with Ga doping content. • Robust electrical properties of the devices were studied. • Outcomes indicates that the developed thin films and heterojunction device is quite impressive for optoelectronic applications. Hence author hope that it will a great addition to the literature for scientists and optoelectronic industries. In this work, we have fabricated the gallium doped tungsten trioxide (Ga@WO 3) films and n-Ga@WO 3 /p-Si diodes by taking various concentrations (0, 3, 6, 9, and 12 wt%) of Ga through the spin-coating method. To analyze the impact of Ga-dopant on the physical properties of WO 3 films, XRD, SEM, and robust dc electrical analyses have been used. From the XRD analysis, compared to the lower concentration of Ga dopant, the higher dopant concentrations show the presence of Ga on the o-GaWO 3 crystal structure. The nanoplates-like surface morphology was detected by SEM analysis. The temperature-dependent dc conductivity was studied by I-V characterization, and 12 wt% of Ga doped WO 3 thin film exhibits a higher conductivity value and low activation energy (E a) at room temperature. The J-V nature signifies that n-WO 3 /p-Si diode performance was enhanced using Ga dopant concentration. The diode constraints ideality factor (n) and barrier height (Φ B) values were determined from J-V, Cheung's, and Norde's functions. From J-V-T & Richardson plot (ln (J 0 /T2)), we obtain that the Φ B values were decreased with decreasing temperature. This is explained through the mechanism of thermionic emission with Φ B Gaussian distribution. The determined parameters of the fabricated films and junction diode signify that these can be employed in the applications of photodetectors and solar cells. [ABSTRACT FROM AUTHOR]

[Display omitted] • Various wt.% of Cu2+ doped ZnO were synthesized by the thermal spreading technique. • The in-depth structural details have been studied through the Rietveld refinement method. • Blue-Green Emission of synthesized materials was obtained using PL analysis. • Chromaticity diagram clearly confirmed the color purity of Blue-Green phosphor. • The organic dye Amaranth has been completely degraded by the prepared materials. In this work "solve two problems with one single action" strategy was implemented to degrade industrial dye Amaranth (AM) and enhanced blue-green emission for optoelectronics applications in Cu2+ doped ZnO materials. The different concentrations (weight (wt) %) of Cu2+ doped ZnO materials have been synthesized by the thermal spreading method. The as-prepared ZnO and Cu2+ doped ZnO materials have been effectively confirmed by various spectroscopic methods. The crystalline phase, surface morphology, compositions of elements and energy bandgap were systematically studied by P-XRD, SEM, EDS and UV–Vis spectroscopic analysis, respectively. With the doping concentration, 18 wt% of Cu2+ doped ZnO revealed outstanding photocatalytic performance to the degradation of Amaranth under visible light irradiation with an efficacy of about 97%. Likewise, 18 wt% of Cu2+ doped ZnO shows strong blue-green emission at around 495 nm owing to internal oxygen vacancies. The present work gives some clue; it may be used as a proficient photocatalyst to degrade dyes and luminescent material for optoelectronics applications. [ABSTRACT FROM AUTHOR]

• Undoped and Sn doped Co 3 O 4 thin films were prepared by JNSP method. • Spherical-like grains are observed from the FE-SEM images. • The optical band gap of Co 3 O 4 film is noticed to be increased after adding Sn ions. • We have fabricated an undoped and Sn doped p-Co 3 O 4 /n-Si junction diode for various concentrations. • We observed that the p-Sn@Co 3 O 4 /n-Si diodes are highly sensitive and appropriate for photodetection applications. [Display omitted] In this work, we have prepared Co 3 O 4 thin films for different doping level including 0, 2, 4, and 6 wt% by JNSP method and analyzed their structural, morphological, optical, and electrical properties by XRD, FE-SEM, EDX, UV-Vis, and current-voltage (I-V) characteristics. The XRD profiles confirm the cubic crystal structures of Sn doped Co 3 O 4 films. Spherical-like grains are observed from the FE-SEM images and were suppressed due to Sn doping. Also, the elements like Sn, Co, and O were confirmed by EDX analysis. The optical band gap of Co 3 O 4 film is noticed to be increased after adding Sn ions, which has been studied through UV-Vis spectroscopy. Most importantly, we have fabricated an undoped and Sn doped p-Co 3 O 4 /n-Si junction diode for various concentrations. The determined ideality factor of the p-Sn doped Co 3 O 4 /n-Si diodes were reduced for both under dark and light conditions. In addition, the calculated responsivity, quantum efficiency, and specific detectivity of the diodes were enhanced with forwarded voltage. The p-Sn@Co 3 O 4 /n-Si diode fabricated with 2 wt% was achieved maximum responsivity and quantum efficiency of R = 247.03 mA/W, QE = 95.7%, and D* = 2.84 × 1010 at 3 V. We observed that the p-Sn doped Co 3 O 4 /n-Si diodes are highly sensitive and appropriate for photo-detection applications. [ABSTRACT FROM AUTHOR]

Novel nanostructure formations like core-shell influence the sensing nature of the optoelectronic devices. In this report, transition metal oxides (TMOs) and transition metal dichalcogens (TMDCs) based sensing layer fabrication and their influence in photo sensing performances were analysed. The metastable h-MoO 3 , thermally stable α-MoO 3 , as synthesized MoS 2 and combinational MoO 3 @MoS 2 core@shell nanocomposites are synthesized by co-precipitation method. Phase purity of synthesized particles was analysed with XRD. Vibration modes of the samples were confirmed with Raman spectroscopy. The morphology behaviours of MoO 3 in different polymorphs due to annealing temperature namely prismatic like h-MoO 3 , layered rod like α-MoO 3 and sphere like MoS 2 decorated core@shell MoO 3 @MoS 2 were observed in the FE-SEM micrographs. The core@shell rod like structured was recorded with HRTEM. Further construction of photodiodes such as n-(h-MoO 3)/p-Si, n-(α-MoO 3)/p-Si, n-MoS 2 /p-Si and n-MoO 3 @MoS 2 /p-Si by employing solution processed method with pre-synthesized particles were discussed in detail. The current-voltage (I–V) characteristics and photo sensing parameters of detector are compared. From the experimental result, n-MoO 3 @MoS 2 /p-Si has better photosensitivity (P S) of 21678.6 (%) and the specific detectivity (D*) of 5.813 × 1010 Jones. [Display omitted] • Novel n-MoO 3 @MoS 2 /p-Si heterostructure diode has been facilely developed. • Structural and vibrational studied confirm the fabrication of n-MoO 3 @MoS 2 system. • MoS 2 decorated core@shell MoO 3 @MoS 2 was observed in the FE-SEM micrographs and core@shell rod like structured were recorded with HRTEM. • The development of photodiodes such as n-(h-MoO 3)/p-Si, n-(α-MoO 3)/p-Si,n-MoS 2 /p-Si and n-MoO 3 @MoS 2 /p-Si has been done. • n-MoO 3 @MoS 2 /p-Si shows (P S) of 18659 (%) and the (D*) of 5.813 × 1010 Jones. [ABSTRACT FROM AUTHOR]

In this work, we have successfully prepared the nano-coral to be intact with the mesoporous of Sn-HfO2 thin films through the (jet nebulizer spray pyrolysis) JNSP technique from different Sn (5, 10, 15 Wt.%) to improve the MIS Schottky diode Al/Sn-HfO2/n-Si. To achieve the phase transformations (monoclinic to orthorhombic) in pure hafnium oxide thin films, we have added the Sn ions as the composite at optimized temperature 600 °C. The XRD characteristic used to determine the structural parameters such as the phase, grain size for pure HfO2, and composite Sn-HfO2 films. The mesoporous with irregularly shaped balls and nano coral-like morphology have been observed through FESEM images. The absorption coefficients and bandgap energy have been determined from the UV Vis spectrum. The EDAX elementary analysis has confirmed the presence of Sn, Hf, O elements in each film. The XPS spectrum has confirmed Sn's presence and binding peak with a spin-orbit on the films' surface. I-V curves of forward and reverse bias determine the barrier height, ideality factor, and saturation currents from the thermionic emission theory. All the Al/Sn@HfO2/n-Si diode parameters are strongly improved after the incorporation of Sn ions. [ABSTRACT FROM AUTHOR]

The physical, chemical, and electrical properties of materials are influenced by the shape, size, and surface morphology such as rod, core-shell, network, and flowers. Herein, hollow nano-belt SnS/NiS composite structure was synthesized by the high-temperature wet chemical method in the presence of as-synthesized SnS as seed, and its photoresponse was evaluated by fabricating P-N junction photodiode using n-type Si substrate. Phases that are presented in the synthesized samples were characterized by powder diffraction method. Morphology of SnS and hollow nano-belt formation in SnS/NiS was confirmed by transmission electron microscopy. The solution-processed photodiode was fabricated using synthesized p-type SnS and SnS/NiS on n-Si substrate, and photoresponse was compared with each other. Observed photodiode results revealed that hollow nano-belt based p-SnS/NiS/n-Si photodiode has better photoresponsivity 98.95 mA/W than photodiode fabricated using bare SnS sample. Also, its photosensitivity (275.989% at 3 V), EQE (38.371%), and D* (2.0080 × 1010 Jones) are noticed to be higher when compared with p-SnS/n-Si diode. The enhanced values of fabricated diode make it suitable for high photodetection applications. [ABSTRACT FROM AUTHOR]

The presence of carcinogenic dyes in industrial wastewater is a serious problem that hazards the water bodies and nano-catalysts are key members that are used to purify it. Therefore, this work investigates the synthesis of tungsten oxide (WO3) nanoparticles with various annealing temperatures in the range of 100–600 °C by the co-precipitation method for photocatalysis applications. The improvement in crystallinity of the nanoparticles achieved through annealing temperature and the crystallite size was an increase from 10 to 34 nm. The structural parameters of the prepared samples were characterized using XRD reveals the formation of stable monoclinic structure. FESEM morphological images confirmed the formation of irregularly shaped nanoplates. HRTEM and SAED patterns confirmed the growth of nanocrystalline WO3 nanoparticles. Parameters like (hkl) planes and interplanar spacing values obtained from HRTEM studies agreed well with the results of XRD. The elemental presence and chemical compositions were confirmed from EDS and XPS studies, respectively. The presence of functional groups has been verified through FTIR spectroscopy studies. Considerable decrements in the energy gap of WO3 NPs were observed with annealing from 2.89 to 2.61 eV. The defects/oxygen deficiencies were examined through photoluminescence. The photocatalytic performance of WO3 NPs was assessed by degrading the methylene blue dye. The parameters obtained from Pseudo first-order kinetic studies confirmed that 600 °C annealed WO3 NPs have higher photocatalytic activity. [ABSTRACT FROM AUTHOR]

In this study, novel Gadolinium doped WO 3 nanorods (Gd@WO 3 NRs) were synthesized via facile hydrothermal method. The Gd@WO 3 NRs were systematically characterized by XRD, RAMAN, FESEM, XPS, UV–Vis, and PL. XRD profiles confirmed the single phase of WO 3, and the average crystallite size decreased with increasing the doping concentration. From EDS and XPS analysis of Gd@WO 3 NRs, the presence of Gd, W, and O were confirmed without any additional peaks. UV–Vis spectra indicated that the position of the absorption edge lies within the visible region at all Gd contents in WO 3, and the energy gap was studied. The photoluminescence test indicates that the 5 wt% of Gd doping in WO 3 could reduce the photogenerated electron-hole pair recombination. The remarkable enhancement in the photodegradation activity for degrading the Rhodamine B under visible-light irradiation of WO 3 was studied with Gd doping. The highest photocatalytic performance was found with 5 wt% Gd@WO 3 NRs, due to the accelerated charge transfer process, which improved the photogenerated electron-hole pairs separation. According to trapping studies, the possible photocatalytic mechanism of Gd@WO 3 NRs was also disclosed. The recycling test confirmed the stability of photocatalyst after three cycles. This novel Gd@WO 3 NRs proved to be a superior catalyst for the reduction of organic pollutants. [ABSTRACT FROM AUTHOR]

[Display omitted] • In this work, flower like nano-flakes shaped ZnCo 2 S 4 @GO by hydrothermal method. • The GO coated ZnCo 2 S 4 delivers the capacity of about 1095F g−1 at 1 A g−1. • ZnCo 2 S 4 @GO(3%) is fabricated as positive electrode and CNT as negative electrode, which delivers the capacity of about 164F g−1. • The ASC delivers high energy density of about 43 Wh kg−1 with the power density of 8500 W Kg−1. The great energy density that supercapacitors provide is in critical demand right now. In this work, flower-like nano-flakes shaped ZnCo 2 S 4 @GO (Graphene Oxide) by hydrothermal method. ZnCo 2 S 4 @GO is used because of its large electroactive surface area, flower-like morphology, and quick channels for ion diffusion and electron transport in the as-prepared hierarchical arrays. The GO-coated ZnCo 2 S 4 delivers a capacity of about 1095F g−1 at 1 A g−1. An asymmetric supercapacitor is fabricated with the assembly of ZnCo 2 S 4 @GO (3%) as the positive electrode and activated carbon (AC) as the negative electrode, which delivers a capacity of about 164F g−1. The ASC (asymmetric supercapacitor) delivers a high energy density of about 43 Wh kg−1 with a power density of 38,497 W Kg−1 with a capacity retention of 91% after 10,000 cycles. The better electrochemical results show that ZnCo 2 S 4 @GO will be suitable for energy storage applications. [ABSTRACT FROM AUTHOR]

The present work addresses a simple and sensitive approach to synthesize a 2D bare MoS 2 and graphene analog MoS 2 /MWCNT nanocomposites as an effective electrode material for high-performance supercapacitors. The MoS 2 /MWCNT nanocomposites were prepared via simple hydrothermal treatment. The structural, functional, and morphological analysis were accessed through XRD, HRTEM, FESEM, FTIR, and RAMAN Spectroscopy augmenting the successful formation of MoS 2 /MWCNT nanocomposites. The structural analysis confirms the formation of the hexagonal phase. The morphological analysis possesses the nano-sphere-like structure which is made up of crumpled nanosheets. The chemical bonding and the location of Mo–S and C C bands were confirmed at 428 and 1651 C m-1 respectively. Detailed electrochemical analysis through cyclic voltammetric study, Galvanostatic Charge/discharge and electrochemical impedance techniques shows that as prepared m-M10 sample exhibits excellent super capacitive performances when compared to other samples. This electrode obtained a maximum specific capacitance of 848 F g-1 with a current density 1 A g-1. This material retains 82% of its initial capacitance after 5000 repeated charge-discharge cycles. It exhibits very less charge transfer resistance 0.2Ω and lesser than other electrodes. • The XRD pattern reveals the hexagonal Phase structure. • The SEM images and TEM images showed nano-sphere like structure which are made up of crumpled nanosheets. • The chemical bonding and the location of Mo–S and C C bands were confirmed at 428 and 1651 C m-1 respectively. • The electrode obtained maximum specific capacitance of 848 F g-1 at scan rare 10 mVs−1 with current density 1 A g-1. • This material retains 82% of its initial capacitance after 5000 repeated charge discharge cycles. [ABSTRACT FROM AUTHOR]

This work developed a hydrothermal process for the effective synthesis of Sn-doped graphene nanoparticles. To prepare the samples at 180°C in carbon tetrachloride organic solvent and different levels of Sn concentrations (0.3, 0.6 and 0.9) were used. A variety of analyses were carried out on the prepared materials, including XRD, SEM with EDX, TEM, AFM, UV, PL and I-V. The XRD analysis revealed good crystallinity and hexagonal structure in Sn-doped graphene nanoparticles. An SEM micrograph reveals that the morphology is flower, nano-chalk pieces and agglomerated at some places. The TEM images clearly specify the spherical and are agglomerated at some places. Topography images (AFM) show that hydrothermal treatment at different concentrations influences the growth of Sn-doped graphene NPs. The bandgap of Sn-doped graphene nanoparticles is estimated as 2.23, 3.7 and 4.7 eV. All the p-Si/n-graphene diodes exhibited excellent rectification with less reverse current. The impact of metal (Sn) doping concentration favourably decreases the n value of the p-Si/n-Sn-doped graphene diode. In the current work, it is shown that the p-Si/n graphene diode is highly sensitive to various concentrations of graphene. [ABSTRACT FROM AUTHOR]

In this paper, we report the influence of thermal annealing on structural, electrical properties V2O5 thin films and their application of SBD's. V2O5 thin films were prepared using glass substrate by sol gel spin coating technique. Films were annealed at different temperatures such as 300 °C, 400 °C and 500 °C. The prepared films were introduced as an interfacial layer between metal and semiconductor interface. V2O5 films exhibit single phase tetragonal structure and surface morphology interestingly, it was changed into nanorod-like structure at higher annealing temperature which was observed through field emission scanning electron microscopy. Atomic force microscopy reveals the surface roughness and the mentioned roughness is increasing due to the increase of annealing temperature. The elemental composition was confirmed by energy dispersive X-ray spectrum. From UV–Vis absorption spectroscopy results revealed that the band gap shows a decreasing trend on increasing the annealing temperature. Besides, we analyzed the influence of high quality vanadium pentoxide (V2O5) thin films prepared at different annealed temperatures and act as an interfacial layer between metal and semiconductor in the fabrication of Schottky diode. V2O5 films depicts high electrical conductivity (σdc) of 0.945 (S cm−1) with activation energy of 0.0747 eV (Ea) as a function of temperature. The MIS structured Cu/V2O5/n-Si based SBD's diode performance was analyzed for different temperatures ranging from 30 to 150 °C. V2O5 thin-film act as an interfacial layer on Cu/V2O5/n-Si Schottky diode was successfully explained by the thermionic emission theory. [ABSTRACT FROM AUTHOR]

In this work, boron doped graphene nanoparticles (NPs) were synthesized by the hydrothermal route with different boron tribromide concentrations such as 52, 104, and 156 μL. The structural, morphological and optical properties of the prepared NPs were studied using different characterization techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), atomic force microscopy (AFM), UV–vis spectroscopy and photoluminescence spectroscopy (PL). The XRD pattern reveals the hexagonal crystal structure. The SEM image showed textured sheet-like layers which got agglomerated to form fluffy structures. The TEM images recorded single-crystalline nature and also confirms the particle size was reduced upon increasing boron tribromide solution concentration with recognizable particle shape. The topographic properties of the synthesized B-doped graphene NPs were also studied through AFM images. The UV visible absorbance characteristics peaks 243 and 372 nm were observed correspond to π – π* in C–C bands and n- π* transition. After that as grown NPs were used to fabricate diode junctions on p-Si substrates (p-Si/n-B-doped graphene). The electrical performance of each p-Si/n-B-doped graphene diodes junction was examined using I–V characteristics and electrical parameters of diode junction such as ideality factor, barrier height and reverse saturation current were found 2.9–4.3, 0.75–0.83 eV and 4.88 × 10−6-7.26 × 10−6 A. The calculated ideality factor values of the p-Si/n-B-doped graphene diodes are decreased with increase in boron tribromide solution concentration. [Display omitted] • Boron doped graphene nanoparticles were synthesized by the hydrothermal route for various concentrations of Boron tribromide. • XRD pattern exhibited a hexagonal crystal structure with sharp crystalline peak at (002) orientation. • A sheet-like surface morphology was observed through SEM image. • TEM images confirm the particle size was reduced upon increasing boron tribromide. • A minimum ideality factor of n = 2.9 was obtained for p-Si/n-B-doped Graphene diode fabricated with 156 μL. [ABSTRACT FROM AUTHOR]

We report a novel highly sensitive and pseudocapacitive transparent nickel oxide (NiO) thin film based electrode material fabricated on a conductive glass substrate using a facile binderless electrodeposition process. Effect of the incorporation of Mo-dopant ion on some surface structural and electrochemical properties of the electrode was examined for high performance optoelectronic and charge storage potentials. The material showed some uniqueness in some microstructural features and enhanced degree of crystallinity, suitable for charge extraction and transport with Mo doping. The deposited NiO film demonstrated red shift in band structure by exhibiting optical band gap narrowing from 3.88 to 3.61 eV with increasing Mo content. The degree of disorder as revealed from Urbach response of NiO film was found varying with Mo-content. The material also exhibited enhanced Ni2+ electronic transition states with increasing Mo content which quenched at a critical dopant concentration of 2.4 %. The fabricated NiO thin film electrode showed increased supercapacitive specific capacitance and areal capacity up to a peak value of 1412 Fg−1 and 101 mAh m−2 for 3 % Mo dopant content at 5 mVs−1 scan rate and 0.5 mA cm−2, respectively, but returned diminished at higher dopant content. Excellent cycling stability at ∼ 85 % after 5000 cycles, was also exhibited. Impedance spectroscopic features of Mo-doped NiO electrode indicated fast electrolytic ion transfer response with high rate charge storage capability. The study presents successful fabrication of Mo-modified NiO nanostructured electrode film and demonstrated the influence of Mo impurity on tailoring the properties of NiO host film as suitable electrode in high performance photocatalytic and supercapacitor devices. • Novel Pseudocapacitive Mo doped NiO Thin Film Electrode has been developed from simple two-electrode electrofabrication process • Microstructural studies revealed stoichiometric bunsenite NiO rock salt with fcc crystal structure. • Comparative electrochemical properties of NiO and Mo-doped Mo x O films as supercapacitive electrodes were examined. • The film demonstrated highly stable pseudocapacitive response with improved specific capacitance of 1412 Fg−1 and areal capacity of 101 mAh m−2 at 3% volume Mo dopant content. • The study showed that supercapacitive and photocatalytic properties of NiO thin electrode can be tailored by simply introducing Mo dopant impurity. [ABSTRACT FROM AUTHOR]

[Display omitted] • The hexagonal crystal structure was observed by XRD. • The nanoflakes and flower-like structure were obtained using FESEM analysis. • The electrode material prepared with 160 °C temperature exhibits excellent super capacitive performances. • A maximum specific capacitance of 691 Fg−1 at current density 1 Ag−1 and good cyclic stability of 89 % over 5000 cycles. This work describes the formation of two-dimensional Molybdenum di-sulfide (MoS 2) nanoflakes developed by temperature varying hydrothermal method from 140 °C to 200 °C and further applied as effective electrode material for high performance supercapacitor. The structural analysis confirms the formation of hexagonal crystal structure of MoS 2 by XRD. The surface morphological study revealed uniform growth of MoS 2 nanoflakes and flower-like structure. The chemical bonding and the location of Mo-S band was confirmed at 600 cm−1 through FTIR–spectrum. The electrochemical performances of the MoS 2 electrode were analyzed by Cyclic Voltammetry, Galvanostatic Charge/discharge and electrochemical impedance techniques. The electrode material prepared at 160 °C temperature exhibits excellent super capacitive performances when compared to other temperatures. This electrode recorded a maximum specific capacitance of 691 Fg−1 at current density 1 Ag−1 and good cyclic stability of 89 % over 5000 cycles. It exhibits very less charge transfer resistance 1 Ω which is lesser than other electrodes. [ABSTRACT FROM AUTHOR]

In the current work, CuO spherical and rod-shaped particles has been synthesized with help of co-precipitation technique. XRD studies reveal the presence of phase reversal of CuOH to CuO with single phase monoclinic structure. FT-IR analysis authenticates the occurrence of copper oxide nanostructures with the removal of nitrogen-based vibrations and organic species. FESEM micrographs reveals the formation of interlinked spherical and rod like structured CuO particles with an average size 57 nm. UV–Visible analysis unveils the optical bandgap reduction from 2.62 to 2.04 eV during annealing. XPS analysis portrays the dominant appearance of Cu2+ which confirms the formation of CuO particles inconsistence with XRD and FT-IR results. The improved performance of the prepared photodiode is obtained from I–V characteristics. The excellent optoelectronic properties of the developed photodiode make them suitable for future nano-electronics. • Spherical, rod and needles shaped structures of CuO are successfully prepared by co-precipitation method. • FESEM images confirm the formation of nanospheres, nanorods and nanoneedles structures composed of small voids and trenches. • I–V nature of Al/n-CuO/p-Si type MIS diode indicates higher rectifying activity with minimum n values 4.69. • Particularly, Al/n-CuO/p-Si prepared at light condition samples bespoked exceptional photodiode performance compared with other devices. [ABSTRACT FROM AUTHOR]

Bimetallic sulfides possess great interest in energy storage application because of its multiple merits. In the present work, petal shaper CuCo 2 S 4 @GO was prepared by simple hydrothermal method and serves an active electrode to analyze for supercapacitor applications. FESEM images shows that wrapping of GO on the surface of CuCo 2 S 4 shows petal shaped needle like structure with minute pores in it. It is noted that GO wrapped CuCo 2 S 4 delivers the excellent electrochemical performance with the specific capacitance of about 900 Fg−1 with the capacity retention of about 80% after 5000 cycles. Addition to this asymmetric capacitor was fabricated by using CuCo 2 S 4 @ GO (3%) and AC as positive and negative electrode and delivers the higher energy and power density (47.2 Wh·kg−1, 0.896 kW·kg−1) and long cycling stability after 10,000 cycles. The electrochemical performance shows that CuCo 2 S 4 @GO will be a great electrode for energy storage applications. [Display omitted] • In the present work, petal shaper CuCo 2 S 4 @GO was prepared by simple hydrothermal method. • GO wrapped CuCo 2 S 4 delivers the excellent electrochemical performance with the specific capacitance of about 900 Fg-1 with the capacity retention of 80% after 5000 cycles. • Asymmetric capacitor was fabricated by using CuCo 2 S 4 @ GO (3%) and AC as positive and negative electrode and delivers the higher energy and power density (47.2 Wh·kg−1, 0.896 kW·kg−1) [ABSTRACT FROM AUTHOR]

We report the fabrication of nanocystalline MnO 2 thin film-based electrode on a predeposited indium tin oxide (ITO) film on the glass substrate, using a binderless and simple two-electrode electrofabrication approach. Effects of Co and Cu incorporation on microstructural and electrochemical performance of the electrode were optimally and extensively investigated. The experimental results for the optimum fabrication conditions for Co@MnO 2 and Cu@MnO 2 and pure MnO 2 thin film-based electrode samples showed uniqueness in microstructural features, degrees of crystallinity and roughness, and high electrochemical energy storage performance. Co@MnO 2 film electrode exhibited remarkable specific capacitance (1068 Fg-1) and areal capacity (25.78 mAh cm−2) as against other electrode films (Cu@MnO 2 and pure MnO 2) which exhibited specific capacitances 837 and 438 F g−1 and areal capacities 10.6 and 4.9 mAh cm−2, respectively. Exceptional stabilities were also recorded for the composite samples (87.2% and 84.4% for Cu@MnO 2 and Co@MnO 2 thin film electrodes, respectively) against the pure MnO 2 film electrode sample (77.8%), after 2000 cycles. In addition, the short time constants (1.27 s and 1.31 s) were respectively realized for the fabricated Co@MnO 2 and Cu@MnO 2 electrode films as against the pure MnO 2 electrodes (4.35 s). These features observed in the composite electrode samples demonstrated an exhibition of faster ion response and higher rate capability by the samples. Moreover, the incorporation of Co into the MnO 2 electrode material relatively improved the supercapacitive activeness by enhancing the charge transition and transport. [ABSTRACT FROM AUTHOR]

Pristine and Cu, Mn-doped In 2 S 3 nanoparticles (NPs) were synthesized via a simple, elegant co-precipitation route. The dopant (Cu, Mn metal) influence on the structural, optical, photoluminescence and electrical properties were investigated. The (Cu, Mn) dope In 2 S 3 exhibited polycrystalline XRD phases having particle sizes varying from 36.2 to 49 nm. We noted a substantial decrease in the crystallite size on dopant (Cu, Mn) incorporation in In 2 S 3. From FE-SEM images, nanosheets, nanowires, and needle-like structures were observed. EDS elemental detection confirmed that In, Cu, Mn, and S elements are present in the produced NPs. The increment in bandgap (2.8–3.28 eV) was observed after the Cu, Mn doping in In 2 S 3. Photoluminescence studies demonstrate the photoemission is mainly owing to the donor-acceptor pair transitions. The electrical conductivity decreases significantly with doping, and a maximum electrical conductivity of 1.28 × 10−6 (Ω m)−1 was obtained for pure In 2 S 3 NPs. Mn-doped In 2 S 3 exhibits the highest photocatalytic activity (84%) for Methylene blue. [Display omitted] • Novel metal ions (Cu and Mn) doped In 2 S 3 NSs were prepared and reported here. • Phase confirmation was done through XRD and EDS analyses. • The increment in band gap from 2.8 to 3. 28 eV was observed after the Cu, Mn doping in In 2 S 3. • The electrical conductivity decreases significantly with doping. • Mn-doped In 2 S 3 exhibits the highest photocatalytic activity ∼84% for Methylene blue. [ABSTRACT FROM AUTHOR]

Development of p-SnS:NiS (80:20)/n-Si photodiode for optoelectronic devices. [Display omitted] • Development of p-SnS:NiS and bare p-NiS/n-Si photodetectors are reported. • Phase optimization of NiS and fabrication of SnS/NiS nanocomposite. • Morphology evolution of NiS and SnS/NiS was studied on oleic acid addition. • The value of photosensitivity improved from 75.0% to 2168.1%. • The value detectivity varied from 1.45 × 109 to 5.99 × 1010 jones. Synthesis of metal chalcogenides nanostructures is of profound importance in obtaining desired properties for photo-sensing device fabrication. The present proposed work concentrates on the effect of oleic acid in the preparation of NiS and SnS/NiS composites, and their photodiode properties were examined. Synthesized NiS and SnS/NiS nanosystem characterized by XRD analysis, Raman analysis, Field Emission Scanning Electron Microscopy micrographs. Hexagonal structure of NiS and hexagonal and orthorhombic composite structures SnS/NiS composite was confirmed with XRD patterns. The single-phase SnS nanoparticle and SnS/NiS nanocomposite were confirmed with Raman analysis. The change in morphology while increasing oleic acid on the preparation of NiS and SnS/NiS as aggregated quasi sphere structures were verified with FE-SEM micrographs. SnS/NiS fabricated with different ratios, and oleic acid-assisted NiS composite particles show better photo-response, which is essential for photodiode application. [ABSTRACT FROM AUTHOR]

[Display omitted] • A nanostructured Zn@HfO 2 thin films were through the JNSP technique. • The mesoporous with irregular balls intact nanorods-like structured morphology was observed by FESEM images. • The band gap values are receded continuously after doping. • We have fabricated Al/Zn@HfO 2 /n-Si diode for various Zn concentration. • A minimum ideality factor was obtained for 15 wt% of MIS diode. In this work, we have prepared the nanorods are intact with mesoporous of Zn@HfO 2 thin films through the JNSP technique with different concentrations of Zn (5,10,15 Wt%) to improve the MIS Schottky diode Al/Zn-HfO 2 /n-Si performance. The XRD was used to determine the structural parameters such as the phase and grain size for both pure HfO 2 and Zn@HfO 2 composite films. The mesoporous with irregular balls and nano rod-like morphology have been observed through FESEM images. The absorption coefficients and bandgap energy were calculated from the UV–vis spectrum. The EDAX analysis has confirmed that the Zn, Hf and O percentages in both films. The XPS spectrum has confirmed Zn's presence and binding natural with a spin-orbit splitting on the films' surface. By the thermionic emission theory, I-V curves of forward and reverse bias are used to determine the barrier height, ideality factor and saturation currents. All the Al/Zn@HfO 2 /n-Si diode parameters are strongly improved after the incorporation of Zn ions. [ABSTRACT FROM AUTHOR]

In this work, pure tungsten oxide (WO 3) nanoparticles (NPs) and WO 3 /CoWO 4 nanocomposites (NCs) with various cobalt concentrations from 5 to 20 wt% were prepared via a co-precipitation process and subsequent annealing at 600 °C. All the synthesized samples were characterized by different techniques to study their structural, morphological, elemental, and optical properties and also to verify the conversion of WO 3 NPs to WO 3 /CoWO 4 NCs. X-ray diffraction results confirmed the existence of a stable monoclinic phase for pure WO 3 NPs and that no phase change occurs even after the formation of CoWO 4. The average crystallite sizes calculated for pure WO 3 NPs and 20 wt% WO 3 /CoWO 4 NCs were approximately 34 and 17 nm, respectively. Field-emission scanning electron microscopy revealed that pure WO 3 consists of nanoparticles as well as some nanoplates of size in the 30 nm diameter range. On Co doping of WO 3 , the size seems decrease and reveals very small NPs of size below 20 nm. Energy-dispersive X-ray spectroscopy spectra showed the persistence of chemical elements and their amount before and after the inclusion of cobalt. The chemical composition and the oxidation state of the elements on the surface of the synthesized NPs and NCs were investigated by X-ray photoelectron spectroscopy. The type of functional groups and their corresponding vibrational modes were identified by Fourier transform infrared spectroscopy. UV–visible studies were used to calculate the bandgap (E g) of pure WO 3 NPs and WO 3 /CoWO 4 NCs by means of Kubelka-Munk function plots. There was a reduction in E g from 2.61 eV for pure WO 3 NPs to 2.51 eV for 20 wt% Co NCs. In photoluminescence studies, the intensity of the emission peaks of WO 3 /CoWO 4 NCs showed a decreasing trend in comparison with pure WO 3 NPs. The formation of WO 3 /CoWO 4 NCs effectively controls the charge carrier (electron-hole) recombination. Hence, an appreciable enhancement in the photocatalytic degradation of the toxic dye methylene blue (C 16 H 18 N 3 SCl) of up to 86.5% was accomplished with WO 3 /CoWO 4 NCs (20 wt% Co sample) under irradiation with a UV-A light source. Toxic dye degradation profile of the prepared nanocomposites and proposed mechanism of dye degradation. [Display omitted] • A facile and low-cost co-precipitation method was used to prepare WO 3 nanoparticles and WO 3 /CoWO 4 nanocomposites. • Structural and compositional analyses proved the synthesis of WO 3 and WO 3 /CoWO 4 nanocomposites. • Small nanoparticles was proved via high-resolution transmission electron microscopy, and selected-area electron diffraction analysis. • A reduction in the band gap from 2.61 to 2.51 eV was found on Co doping of WO 3. • Higher photocatalytic activity for degradation of harmful methylene blue was found for WO 3 /CoWO 4. [ABSTRACT FROM AUTHOR]

The current study demonstrates ultra-fast synthesis of highly crystalline Zinc Oxide nanoparticles (ZnO NPs) using direct injection flame synthesis technique and inveterate the performance of p-Si/n-ZnO photodiode for visible light photodetection application. The synthesized ZnO NPs properties were evaluated by XRD, UV–Vis, FESEM, PL and Raman. FESEM reveals the flame synthesized Zinc Oxide NPs has a mixed morphology, including nanorods, nono-coffins, nanoneedles, nanoplates and nano-tetrapods with an average grain size of 108 nm & particle size of 127 nm with the optical bandgap of 3.27 eV. The synthesized ZnO NPs were coated onto the p-Si substrate and it shows promising photodetection performance. The p-Si/n-ZnO photodiode device possesses an ideality factor of 2.73, Barrier height of 0.7 eV, photosensitivity of 535%, responsivity of 2.36 mA/W and detectivity of 4.04 × 109 jones indicates the promising applications of p-Si/n-ZnO photodiode as photodetectors along with blue LED devices. [ABSTRACT FROM AUTHOR]

[Display omitted] • Cu-Yb 2 O 3 thin films have been effectively coated with different Cu doping concentrations. • A polycrystalline with a cubic phase was obtained via JNSP route. • The UV–visible analysis indicates minimum E g and maximum σ opt of 3.14 eV and 8.67 × 1013 Ω·cm−1 • The electrical characteristics of the fabricated MIS SBDs with various Cu doped Yb 2 O 3 interface layers were investigated. • The maximum Φ B and minimum n values were obtained for 4,5 wt% of MIS diode. In the present work, transition metal doped rare earth metal oxide (Cu-Yb 2 O 3) thin films have been effectively synthesized on a large scale using low-cost jet nebulizer spray pyrolysis (JNSP) route at different copper (Cu) doping concentrations (0, 1.5, 2.5, 3.5, and 4.5 wt%) with optimized substrate temperature of 550 °C. The structural, morphological and opto-electrical properties were investigated using various characterization techniques. The X-ray diffraction (XRD) profile indicates the polycrystalline nature of all the deposited films with a cubic phase and the size of crystallites is found to increase from 11 to 31 nm. The field emission scanning electron microscope (FESEM) images reveal that the Cu doping has significant impact on the surface morphology of Cu-Yb 2 O 3 films. The atomic force microscope (AFM) analysis exposed higher roughness value for 4.5 wt% of Cu-Yb 2 O 3 films. The elemental composition study approves the presence of Yb, Cu and O in the film. The transmittance and indirect optical energy gap of Cu-Yb 2 O 3 films have been analyzed by UV–Visible spectroscopy which established the systematic band gap reduction of Yb 2 O 3 thin films from 3.68 to 3.14 eV with increasing Cu concentrations. The DC electrical studies showed a maximum conductivity and minimum average activation energy for 4.5 wt% of Cu-Yb 2 O 3 film. The electrical characteristics of the fabricated Al/Cu-Yb 2 O 3 /p-Si Schottky diode was investigated using current–voltage (I-V) measurements performed under dark and light conditions. The Φ B (0.911 eV in dark & 0.754 eV in illumination) and minimum n values (2.120 in dark and 1.757 in illuminations) were obtained for MIS diode having Cu doping concentration of 4.5 wt% in Yb 2 O 3. [ABSTRACT FROM AUTHOR]

[Display omitted] • Morphology tuned SnS hierarchical structures with improved photodetection are developed. • The barrier height was changed from 0.70 to 0.83 eV in dark and 0.67 to 0.77 eV under light. • The enhancement in photosensitivity from 7018.02 to 63095.6%, was noticed for p-SnS + Oleic acid (1.5 mL)/ n -Si. • An improvement in photoresponsivity (R) from 22.5 to 73.75 (mA/W) was observed for the developed SnS photodiodes. • The specific detectivity was improved from 1.01 × 1011 to 1.78 × 1011 jones for SnS photodiode. Hierarchical structure transformation and surface modification of solvothermal method synthesized SnS with oleic acid in ethylene glycol solvent were discussed in detail. The structural, optical, and morphology of as prepared SnS samples were examined by X-ray diffraction (XRD), Raman Spectroscopy, and Field Emission Scanning Electron Microscopy (FE-SEM). XRD verifies the orthorhombic crystal structure of the SnS phase for all synthesized samples. Single-phase nature of synthesized particles was confirmed with Raman characterization. Morphology evolution of SnS from regular to hierarchical structures upon adding oleic acid is performed through FE-SEM analysis. Junction diodes p-SnS/ n -Si fabricated with different oleic acid concentrations (0.5, 1.5, and 2.5 mL) synthesized SnS particles show better photo-response, which can be used in photodiode applications. [ABSTRACT FROM AUTHOR]

In this work, pure and Mn-doped nickel ferrite (Ni1-xMnxFe2O4, x = 0, 3, 6, 9, and 12 wt%) thin films were prepared using facile nebulizer spray pyrolysis technique. The effect of Mn concentration on the structural, optical, and magnetic properties was studied. The XRD pattern confirms the cubic spinel structure of Ni1-xMnxFe2O4 thin films and reveals the preferred orientation along the (311) direction for each film. Moreover, the average crystallite size (D) is found to increase from 13 to 30 nm with increasing Mn concentration. The FESEM micrographs exhibit randomly arranged plate-like and rice-like grains. The elements such as Mn, Ni, Fe, and O are confirmed by the EDX analysis. The optical band gap energy (Eg) varies between 2.90 and 3.60 eV. The Ni1-xMnxFe2O4 film prepared with 3 wt% of Mn exhibits superior ferrimagnetic behavior with the highest value of ηB (57.31) due to the high crystallinity, packing density, and smooth surface of the film. The present work shows that the facile nebulizer spray pyrolysis technique can produce high-quality Ni1-xMnxFe2O4 thin films with good magnetic properties. [ABSTRACT FROM AUTHOR]

Zn-doped TiO2 films were deposited on ultrasonically treated alumina substrates via the automatic nebulizer spray pyrolysis method. In this study, the thickness of the as-prepared films was gradually reduced, and their Brunauer–Emmett–Teller (BET) surface area and pore volume results were notably improved; in addition, values for the blue-shifted sharp edge absorption with an enlarged bandgap (Eg) were revealed in the deposited films. The agglomerated granular form has evolved into tiny grains with porous brighter particles scattered over the surface of the coated films. The sensing performance to reducing gases for combustible gas of ammonia (NH3) and volatile organic compounds of methanol (CH4O) and formaldehyde (HCHO) with the function of operating temperature and gas concentration were studied, and the highest sensing response of the hazardous formaldehyde (HCHO) reducing gas was noticed. [ABSTRACT FROM AUTHOR]

In this work, we present the synthesis and characterization of molybdenum oxide (MoO3) nanoparticles (NPs). The MoO3 NPs were coated on silicon (Si) wafer to fabricate n-MoO3/p-Si diode by the spin coating method. X-ray diffraction (XRD) profiles clearly show the crystalline nature of all specimens with an orthorhombic crystal system. Stretching and bending vibrations of molybdenum-oxygen were confirmed by the Fourier transform infrared analysis. The maximum absorbance was observed for MoO3 NPs prepared from Nitric acid (HNO3). Nano flakes like morphology were seen by scanning electron microscopy (SEM), and elemental dispersion spectral analysis approved expected Mo and O elements in the final product. Transmission electron microscopy (TEM) analysis of the as-prepared samples indicates a single-phase orthorhombic crystal structure. Electrical conductivity results show that synthesized samples are having semiconducting behavior. It is noted that the p–n junction diode prepared with Hydrochloric acid (HCl) has better rectifying behavior with lower ideal factor (n) values of 2.47 than the other sample. [ABSTRACT FROM AUTHOR]

In this work, fine nickel oxide nanoparticles (NiO NPs) were successfully made utilizing a straightforward co-precipitation approach at low temperature. The effects of precursor concentration on the structural, optical, and electrical characteristics of NiO nanoparticles were investigated. All indexed diffraction peaks in XRD demonstrate the production of NiO with cubic structure. An increase in NiO crystallite size above 16.8 nm was observed when the precursor concentration exceeds 2 M, suggesting the presence of nanostructure in the final product. In FT-Raman spectra, the band centered at ∼ 500 cm–1 is due to Ni-O stretching (LO) mode, and two-magnon (2 M) scattering mode causes the band at 1514 cm–1. The synthesized product is composed of almost rod-shaped particles with a size range of 10–20 nm, according to FESEM pictures. The UV absorption studies showed a high absorption at the fundamental absorption edges originating at 332 nm, which gradually shifted to a lower energy region up to 400 nm with increasing precursor concentration, which means a reduction in bandgap values. The effect of precursor concentration associated with the electrical characteristics of the produced NiO nanoparticles has been investigated for the temperature range 30 to 130 °C. The I-V characterization was used to compute the different photo-diode parameters including n, Ф B , I o , P S , R, QE, and D*. The remarkable high photosensitivity of 1100% and specific detectivity of 4.324 × 10−10 Jones for the diode evaluated at 120 mW/cm2 was observed in a 2 M fabricated diode. These findings imply that all the fabricated diodes are exceptionally light-sensitive and are well-suited for upcoming UV photodetector applications. [Display omitted] • Development of NiO nanostructures-based photodiode with remarkable photosensitivity is reported • The XRD and Raman analyses confirm the synthesis of cubic NiO system • Crystallite size was improved from 10 to 17 nm with an increase in molar concentrations • Rising concentrations cause a steady decrease in the band gap energy from 3.45 to 3.1 eV. • A remarkably high photosensitivity of 1100% was observed for the device developed with 2 M concentration. [ABSTRACT FROM AUTHOR]

Nanoparticles (NPs) of Cu 1- x Ni x Fe 2 O 4 (0 ≤ x ≤ 0.5) have been facilely prepared via combustion through microwave technique. X-ray diffraction outcomes confirmed single-cubic phase synthesis of titled material and mean crystallites size and lattice constants were calculated in range of 19.37–22.69 nm and 8.319–8.248 Å, respectively. The XPS study confirms the chemical elements and oxidations states of Cu 0.6 Ni 0.4 Fe 2 O 4 NPs. The high-resolutionSEM study reveals spherical NPs with agglomeration and composition of elements in Cu 1- x Ni x Fe 2 O 4 (0 ≤ x ≤ 0.5) was confirmed through EDX study. The Kubelka-Munk model was employed to determine the energy gap of Cu 1- x Ni x Fe 2 O 4 NPs and noticed to vary from 2.30 to 2.06 eV. Photoluminescence spectra study explained the rate of recombination of electron and hole pairs. The detailed magnetic study was carried out and magnetization of remanence (M r), coercivity (H c) & saturation (M s) values were estimated through recording the hysteresis plots. The magnetic M r & M s values are noticed to be enhanced from 5.21 to 11.02 emu/g &17.37–31.37 emu/g with Ni content. Furthermore, the Cu 1- x Ni x Fe 2 O 4 (0 ≤ x ≤ 0.5) NPs were studied by means of visible light induced RhB dye degradation and investigates major active species and a probable mechanism for degradation has been conferred. The photocatalytic activity of CuFe 2 O 4 NPs has been improved via Ni doping. Photoluminescence spectra showed the rate of recombination of electron-hole pairs and presence of defects. Image 1 • Novel Cu 1-x Ni x Fe 2 O 4 (0 ≤ × ≤ 0.5) NPs synthesis was achieved via microwave combustion. • Monophasic cubic structure synthesis of CuFe 2 O 4 at all Ni contents is noticed. • The energy gap was determined and noticed to reduce from 2.30 to 2.06 eV. • The M r values are noticed to be enhanced from 5.21 to 11.02 emu/g with Ni content. • The photocatalytic activity of CuFe 2 O 4 NPs has been improved via Ni doping. [ABSTRACT FROM AUTHOR]

• Novel high-performance p-CuO@CuS/n-Si photodetectors have been facilely fabricated. • Structural and vibrational studied confirm the synthesis of fabrication of CuO@CuS nanocomposite system. • Core-shell structure like morphology was approved by FESEM & HRTEM analyses. • High P s of ∼ 7.76 104 % & R ∼ 798.61mA/W was observed for the fabricated photodetector. • High detectivity (D*) of 8.19 ×1011 J & of ∼ 309.66%, was observed for the fabricated photodetector. Development of photo detectors based on different semiconducting materials with high performance has been in progress in recent past, however, there is a lot of difficulties in developing the more effective photo detectors-based devices with high responsivity, detectivity and quantum efficiency. Hence, we have synthesized pure CuS and CuO@CuS core-shell heterostructure based photo detectors with high performance by simple and cost-effective two-step chemical co-precipitation method. The phase purity of CuS and CuO@CuS composite was observed by XRD analysis and the result were verified with Raman spectroscopy studies. Sphere like morphology of pure CuS and core-shell structure formation of CuO@CuS are observed with scanning and transmission electron microscopes. The presence of expected elements has been confirmed with EDX elemental mapping. Light harvesting photodiodes were fabricated by using n-type silicon substrate through drop cost method. Photo sensitive parameters of fabricated diodes were analyzed by I–V characteristics. The p-CuO@CuS (1:1)/n-Si diode owned a maximum photosensitivity (Ps) ∼ 7.76 × 104 %, photoresponsivity (R) ∼ 798.61 mA/W, external quantum efficiency (E Q E)∼309.66 % and specific detectivity (D*) ∼ 8.19 × 1011 Jones when compared to p-CuS/n-Si diode. The obtained results revealed that the core/shell heterostructure of CuO@CuS is the most appropriate for photo detection. [ABSTRACT FROM AUTHOR]

The advancement of p–n photodiode fabrication employing rare-earth materials has created cogent interest in the field of semiconductor device technology. We report on the formation of pure and Sn-doped CeO2 thin films assembled through spray pyrolysis technique to enhance the p-Si/n-Sn:CeO2 diode performance. A polycrystalline nature of cubical crystal structured Sn-CeO2 thin films was developed on glass slides with various doping levels of tin (0, 2, 4 and 6 wt%). The crystallite size was found to decline with increasing Sn wt%. A uniform surface with tiny spherical-like crystallite grains was observed through the FE-SEM microscope. The existence of Sn ions with the CeO2 system was confirmed by the EDX and XPS spectrum. The effect of Sn doping on the optical absorption and band gap of CeO2 was evaluated, in which the 2 wt% Sn exhibited lower Eg value with maximum absorption. The Sn ions enhanced the electrical conductivity suggesting the semiconducting nature of the films. The p-Si/n-Sn:CeO2 diode was fabricated, and its performance was analyzed under dark and light intensity of 100 mW/cm2. The photosensitivity of the device varied from 17.11 to 671.65%. The ON–OFF photoresponse of 6 wt% Sn is relatively higher than that of pure CeO2. [ABSTRACT FROM AUTHOR]

The presence of high dielectric material between the metal and semiconductor interface played a significant role in many electronic device applications. In this work, we have fabricated Al/n-Si Schottky barrier diode by introducing nanostructured HfO 2 films as a middle layer with different substrate temperatures via JNSP technique. XRD analysis revealed significant phase change from amorphous to monoclinic phase while increasing substrate temperature. Through FESEM images, a porous structure and irregular sphere-like grains were observed. The optical energy band gap of the HfO 2 films has found to vary from 3.41 to 3.73 eV respectively. From I–V characterization, the obtained diode ideality factor was found to be decreasing and their corresponding barrier height increased with respect to substrate temperature. Particularly, the diode fabricated at 600 °C exhibited better ideality factor value (n = 3.4). We observed that the presence of highly dielectric films strongly improved the diode parameters, especially at high substrate temperature. • A nanostructured HfO2 thin films were prepared at various substrate temperature (400-600 °C) a low-cost spray pyrolysis. • A significant phase change was observed from amorphous to monoclinic while increasing the substrate temperature. • Micro-porous and ball-like grains have been recorded through FE-SEM micrographs. • The HfO2 film prepared at 600 °C shows maximum absorbance and minimum bad gap of 3.41 eV. • Al/HfO2/n-Si structured Schottky barrier diodes were fabricated with different substrate temperature. [ABSTRACT FROM AUTHOR]

In this work, we report a p-Si/n-CeO2 junction diode fabricated by a cost-effective and large-area deposition technique of jet nebulizer spray pyrolysis. The n-CeO2 layer was coated on four different substrate temperatures (Tsub) 350, 400, 450, 500 °C and their properties were studied by various techniques like XRD, FE-SEM with EDX, UV–Vis and I–V characterization. XRD pattern confirmed a cubic fluorite crystalline phase of CeO2 thin films with preferential growth along (2 0 0) direction. A smooth surface with inter-connected smaller grains was recorded by FE-SEM micrographs and also the existing elements Ce and O have been confirmed. For Tsub of 450 °C, an exceptional optical absorption with smaller band energy of 3.3 eV was recorded in the UV–Vis spectrum. The electrical conductivity results indicated that all the films are semiconducting in nature. I–V characteristics of all the fabricated diode showed better rectification in dark with excellent photovoltaic characteristics under light exposed condition. The photosensitvity of the diode varied from 21.94 to 1093.75% with substrate temperature. Our results strongly suggested that rare-earth based p-Si/n-CeO2 diodes are suitable for future applications in ultraviolet photo-detector and photo-diode. [ABSTRACT FROM AUTHOR]

Octahedral indium oxide thin films with different precursor concentrations of 0.05, 0.075, 0.1 and 0.125 M were coated on glass substrates at 450 °C using jet nebulizer spray pyrolysis technique. Surface morphology of the prepared samples showed closely packed octahedrons for all concentrations. The measured root-mean-square value of the films was varied between 40.45 and 188.98 nm with increased precursor concentrations. From optical analysis, the calculated optical band gap was continuously decreased with increase in precursor concentrations. A slight blue shift was recorded through the PL spectrum while increasing the precursor concentration due to the oxygen vacancies. The nature of electrical conductivity of the In2O3 films was analysed. Interestingly, we have calculated two types of activation energies in the In2O3 films one is corresponding to low temperature and another is higher temperature. Further, p-Si/n-In2O3 junction diodes are fabricated with different precursor concentrations. Particularly, the 0.075 M of p-Si/n-In2O3 junction diode recorded a minimum ideality factor of n = 2.64 under light exposed condition, confirming the photo-conducting nature of the diodes in visible wavelength range. [ABSTRACT FROM AUTHOR]

We report an inorganic aqueous solution route for pure molybdenum trioxide (MoO 3) and zirconium oxide composite (MoO 3 -ZrO 2) insulating layer of Cu/MoO 3 -ZrO 2 /p-Si metal-insulator-semiconductor structured Schottky barrier diodes. These composite films were coated by Jet Nebulizer Spray Pyrolysis techniques with a substrate temperature of 500 °C and analyzed using X-ray diffraction, Field emission scanning electron microscope, DC electrical conductivity and I–V characterization. These MoO 3 -ZrO 2 films exhibited different crystal structures. Field emission scanning electron microscopes images displayed plate-like structure with improved grain size. The presence of Zr, Mo and O atoms were confirmed by energy dispersive x-ray spectrum. Optical studies shows the maximum absorption and higher optical badgap for (15 wt%) of Zr in MoO 3. DC electrical studies recorded the maximum activation energy with minimum conductivity for Zr based composite films. Current - Voltage measurements were analyzed in both dark and illuminated conditions for Cu/MoO 3 -ZrO 2 /p-Si Schottky Barrier diodes. Minimum ideality factor (2.98) and maximum barrier height (0.664 eV) was obtained for 15 wt% of Zr composite thin films. [ABSTRACT FROM AUTHOR]

The influence of nickel (Ni) doping concentrations on structural, optical, electrical and diode properties of molybdenum trioxide (MoO3) thin films has been studied systematically. Ni-doped MoO3 films and diodes were prepared for various doping concentrations of Ni such as 0, 3, 6 and 9 wt.% by jet nebulizer spray (JNS) pyrolysis technique. The structural properties of Ni-doped MoO3 films were analyzed by X-ray diffraction (XRD) pattern and scanning electron microscopy (SEM). The prepared films were exhibited in the orthorhombic crystal structure and sub-microsized plate-like surface morphology. The energy-dispersive X-ray spectroscopy (EDX) analysis confirmed the presence of Ni, Mo and O elements in the prepared films. Ultraviolet–visible (UV–vis) analysis results showed that the absorbance decreases with the increasing of Ni doping concentration and the minimum band gap energy (Eg = 2.25) was obtained for 9 wt.% Ni-doped MoO3 film. From current–voltage (I–V) characterization, the conductivity is increased by increasing the Ni doping concentration in MoO3 thin films. The diode measurements were performed in darkness and under light illumination of a halogen lamp. The methods of I–V, Cheung's and Norde were used to calculate the diode parameters of ideality factor (n), barrier height (Φb) and sheet resistance (Rs). Also, the light ON/OFF switching response of the fabricated n-NiMoO3/p-Si diodes was analyzed. [ABSTRACT FROM AUTHOR]

Metal-insulator-semiconductor (MIS) structured Schottky barrier diodes (SBDs) are the most significant device in optoelectronic device application. Here, we demonstrated a highly rectifying SBDs using a thin interfacial layer among p-type silicon (p-Si) and metal (Cu) junction. These composite films are coated with different concentrations of Ba (0, 5, 10 and 15 wt%) using jet nebulizer spray pyrolysis (JNSP) technique with an optimized substrate temperature of 500 °C. A significant reduction of reverse saturation (Io) current was obtained on introducing the Ba–MoO 3 composite films in between Cu/p-Si interface. X-ray diffraction (XRD) pattern revealed the monoclinic crystalline phases of Ba–MoO 3 thin films along with improved grain size. Field emission scanning electron microscope (FE-SEM) images of the prepared thin films displayed a plate-like structure, which on increasing the Ba concentration transforms into a flag-like structure. The presence of constituent elements like O, Mo, Ba were confirmed by energy dispersive analysis X-Ray (EDAX) spectrum. The atomic force microscopy (AFM), exposed a smoother surface and an improved surface roughness of the film while varying the Ba concentration. Band gap energy of the Ba–MoO 3 films are found to increase after adding the Ba content. The electrical conductivity decreased with increasing Ba concentration of Ba–MoO 3 films corresponding activation energy is increased. All the fabricated Cu/Ba–MoO 3 /p-Si diodes show positive photoconducting nature, in which the ideality factor of the diode decreases gradually with Ba concentration. Hence 15 wt% of Ba shows better device performance relatively with other diodes. Image 1 • Highly rectifying Cu/Ba–MoO 3 /p-Si structured Schottky barrier diodes has been fabricated through low cost jet nebulizer spray pyrolysis technique. • The phase changes was observed (orthorombic to monoclinic) while increasing Ba concentration. • Remarkably, the plate-like and flower-like sufface morphology was revealed by FE-SEM. • Cu/Ba–MoO 3 /p-Si diode fabricated with 15 exposes a lower n = 1.92 values under light condition. • The Cu/Ba–MoO 3 /p-Si diodes highly appropriate for UV photodetector application. [ABSTRACT FROM AUTHOR]

[Display omitted] • The pure and Eu doped β-Bi 2 Mo 2 O 9 nanoparticles were synthesised via sol gel method. • Single phase β - Bi 2 Mo 2 O 9 formation and porous natured was confirmed with XRD, SEM and Raman. • Eu doped Bi 2 Mo 2 O 9 shows enhanced photocatalytic activity. A facile sol–gel technique was employed to synthesize the nanoparticles of β-Bi 2 Mo 2 O 9 in acidic and water medium and Eu doped β-Bi 2 Mo 2 O 9 in acidic medium. The crystalline structure of the synthesized nanoparticles was characterized by powder X-ray Diffractometry, thereby confirming the monoclinic structure of pure β-Bi 2 Mo 2 O 9 and Eu-doped β-Bi 2 Mo 2 O 9. Raman analysis was performed to verify the phase purity and to identify the vibrational modes of synthesized pure and doped molybdates. The surface morphology of synthesized particles was examined using scanning electron microscopy, which shows the formation of a honeycomb-like structure with numerous pores. UV–visible spectroscopy and XPS studied the optical properties of synthesized nanoparticles. The dye degradation process demonstrated the photocatalytic activity under visible light radiation in which Methylene blue acts as a model dye. The change in the absorbance of the dye with synthesized β-Bi 2 Mo 2 O 9 and Eu-doped β-Bi 2 Mo 2 O 9 with different concentrations of Eu3+ was studied by a UV–Visible spectrophotometer. The results indicate that the water-based β-Bi 2 Mo 2 O 9 shows more dye degradation than acidic-based β-Bi 2 Mo 2 O 9. The doping of Eu3+ increased the photocatalytic activity of acidic-based β-Bi 2 Mo 2 O 9 synthesis, and the efficiency increased with an increase in the doping percentage of Eu3+. The 10% Eu:Bi 2 Mo 2 O 9 completely degraded the Methylene Blue dye (100 %) within a period of 4 h. [ABSTRACT FROM AUTHOR]

• Novel Pseudocapacitive Zn doped CuO Thin Film Electrode with enhanced supercapacitive performance was electrofabricated using simple two-electrode. • Microstructural studies revealed polycrystalline Cu x O structure which contains the appearance of mixed phases of both Cu 2 O and CuO. • Comparative electrochemical properties of CuxO and Zn-doped Cu x O films as supercapacitive electrodes were examined. • Highly stable pseudocapacitive response with improved specific capacitance of 263 Fg−1 and areal capacity of 5.83 mAh cm−2 at 1% vol. Zn dopant content was established. • The study demonstrates successful incorporation of Zn ion in Cu x O lattice structure with improved supercapacitive and photocatalytic properties. [Display omitted] We report the consequence of Zn doping on some surface and electrochemical characteristics of Cu x O nanostructured film, obtained via a facile and cost effective two electrode electrochemistry. Impact of Zn dopant on photoabsorption and supercapacitive responses of Cu x O thin film electrode was examined. Microstructural studies revealed anisotropic growth of monoclinic and cubic Cu x O crystals featuring alternate arrangements of O and Cu ions. Some structural properties of Zn-doped Cu x O film were also found varying with Zn content. Cu x O film exhibited red shift in its band structure and its optical energy band gap consequently declined from 2.62 to 2.20 eV with increasing Zn dopant. Zn-doped Cu x O film also demonstrated highly stable pseudocapacitive response with improved specific capacitance of 263 F g−1 and areal capacity of 5.83 mA h cm−2. Lower series and charge transfer resistances as well as huge ohmic resistivity drop were also observed in the Cu x O electrode with Zn dopant, indicating better ionic conductivity and charge storage capability. The study demonstrates successful incorporation of Zn ion in Cu x O lattice structure and showed that supercapacitive and photocatalytic properties of Cu x O thin electrode can be tailored by simply introducing Zn dopant impurity. [ABSTRACT FROM AUTHOR]

• Highly uniformed and well dispersed Ti-doped CdO NPs were successfully synthesized by Microwave irradiation technique. • The surface morphology of the NPs change from nail-like shape to sphere-like shape with grain size decrease due to Ti doping. • The n-TiCdO/p-Si diodes possess photoconducting behavior and they can be used as photodetectors. [Display omitted] The microwave irradiation technique has been used to synthesize the highly uninformed and well dispersed pure and Ti-doped CdO NPs. The influence of Ti-doping on microstructural, surface morphology, and optoelectrical characteristics of the prepared samples were inspected by XRD, SEM, TEM, EDS, XPS, and DC electrical conductivity. X-ray diffraction result exposes that the synthesized nanoparticles are crystalline with a cubic phase having preferred orientation along (111) plane. Ti doping affects the crystallinity and microstructural properties such as crystallite size (D), lattice constant (a), microstrain (ε), dislocation density (δ), and stacking fault (SF). SEM and TEM micrographs depicted that the nanoparticles' surface morphology changed from nail-like shape to sphere-like shape with a decrease in grain size due to Ti doping. EDS and XPS studies reveal the synthesis of CdO and Ti-CdO nanoparticles without impurities. The I-V graph shows high conductivity at higher doping levels. The fabricated n-TiCdO/p-Si diode parameters have been examined at dark and light illumination conditions. The diode feature, like the ideality factor (n) and barrier height (Ф b) , is calculated by the J-V method. [ABSTRACT FROM AUTHOR]

• A polycrystalline with dual phase in nature of cubic and monoclinic structure was observed. • The largest and lowest energy gap values are found to be 4.03 eV and 2.44 eV for Gd and metal copper. • White sponge, nanorods, nanoneedles and nanorice shaped morphology has observed by FESEM. • The MIS diode was achieved a minimum ideality factor values of 5.34. • The excellent opto-electronics properties of the developed photodetectors make it suitable for future nano-electronics. Here we are reporting the development of Gadolinium based copper oxide nanocomposites via a cost-effective low-temperature co-precipitation process. X-ray diffraction study approves the dual phase polycrystalline cubic and monoclinic structure with predominant orientations along (2 2 2) and (0 0 2) directions. A strong &sharp peak is positioned at ~512 cm−1in FT-IR is assigned to metal oxide (Cu-O/Gd-O) network terminal stretching & phonon band. Absorption study reveals strong absorption peaks for the samples prepared from pure copper (Cu) and gadolinium (Gd), however poor absorption was noticed from mixed CuO-Gd2O 3 nanocomposites.The largest and lowest energy gap values are found to be 4.03 eV and 2.44 eV for Gd and metal copper, respectively. White sponge, nanorods, nanoneedles and nanorice shaped morphology has observed from FESEM analysis. X-ray photoelectron spectroscopy (XPS) survey spectrum unveils the essential elements like Cu, Gd and oxygen. The peak fitting of Gd4d exhibits two major peaks at 143.6 and 155.8 eV binding energies correspond to spin orbit doublet splitting of 12.2 eV between 4d 5/2 and 4d 3/2 , respectively. From I-V study, we observed that the presence of CuO-Gd 2 O 3 nanocomposites at p-Si/Al interface improved the performance of the MIS diode. The excellent opto-electronics properties of the developed photo-detectors make it suitable for future nano-electronics. [ABSTRACT FROM AUTHOR]

• The reported work demonstrates the synthesis of pristine WO3 and Manganese (Mn)-doped WO3 through co-precipitation method. • A dynamic increment in AC conductivity was observed with doping even at room temperature. • We prove that Mn-doped WO3 nanoparticles are an outstanding candidate for applications for supercapacitors. • The electrochemical properties of Pure and Mn-doped WO3 samples were analysed through cyclic voltammetry measurements. • 1 wt% Mn-doped WO3 electrode reports excellent electrochemical efficiency. • An electrochemical efficiency of (1178 F/g specific capacitance at 2 mA/cm2) is reported for 1 wt% Mn-doped WO3 supercapacitors. • 1 wt% Mn- doped electrode material also delivers a long cycle life (94.2% capacity over 5,000 repetitive GCD cycles). The work reported here, demonstrates the synthesis of pristine WO 3 and Manganese (Mn)-doped through the hydraulic acid-assisted precipitation method. Structural, morphological, compositional, optical and electrochemical properties of the synthesized samples were analysed. The structural analysis through X-ray diffraction studies confirmed the monoclinic phase of WO 3 as well as the substitutional incorporation of Mn inWO 3 lattice. A bandgap value of 2.9 eV was estimated from Optical analysis using Kubelka-Munk model. The defect centered luminescence as a consequences of Mn doping was analyzed using photoluminescence spectroscopy (PL). FT Raman Spectroscopic data also reconfirmed the monoclinic structure of the sample and incorporation of Mn into the lattice of Mn-doped WO 3. The surface morphological study was performed using Field Emission Scanning Electron Microscope (FESEM), which exhibits the development of mesoporous networks. The Conductivity, dielectric and electrochemical studies were performed on these mesoporous structures to inveterate the impact of Mn doping. A dynamic increment in AC conductivity was observed with doping even at room temperature. Most significantly, we prove that Mn doped WO 3 for the first time, Nanoparticles are an outstanding candidate for applications for supercapacitors. Pure and Mn doped WO 3 electrochemical properties cyclic voltammetry measurements have been used to analyze samples. The results showed the excellent electrochemical efficiency on 1 wt% Mn doped WO 3 electrode (1178 F/g specific capacitance at 2 mA/cm2 and charge transfer ability) for supercapacitors. [ABSTRACT FROM AUTHOR]

[Display omitted] • Novel Y@CdS photodetectors were developed via facile spray pyrolysis technique. • XRD & FT-Raman analyses confirm the hexagonal phase of CdS at all Y contents. • Optical band gap of films were found in range of 2.38–2.42 eV. • A noticeable enhancement in responsivity (R) and external quantum efficiency (EQE) was noticed with 3 wt. % Y doping. • Developed photodetector with 3 wt.% Y@CdS will be highly useful in optoelectronics. Visible-light photodetectors are in great demand in current scenario for advanced optoelectronic devices. Hence, in current work we have fabricated the photodetectors based on Cadmium Sulfide (CdS) thin films with different contents of Yttrium (Y) doping. Hexagonal phase confirmation of the fabricated films was confirmed by X-ray diffraction and FT-Raman spectroscopy analyses. The crystallite size of grown films was determined and found within the range of 33 nm. Scanning electron microscopy was carried out to analyse the surface morphology of the films and reveals nanograins formation on the surface. Optical absorption/transmission/reflectance spectra were recorded up to near-infrared region and optical energy gap was estimated including several other optical parameters. PL spectra were recorded and an intense emission was observed at 542 ± 12 nm when excited at 350 and 450 nm both. The electrical characteristics were explored under dark and light conditions. The highest photoelectrical resistivity and sensitivity were observed for 5.0 wt.% which are around ∼9.45 × 107 Ω−1 and 55.07 % at 0.5 mW/cm2. However, the highest responsivity, external quantum efficiency and detectivity was observed for 3.0 wt.% and noticed around 0.83 A/W, 193.82 % and 4.28 × 1011 Jones, respectively. Outcomes reveal that the Y doping enhances the CdS photodetection nature. [ABSTRACT FROM AUTHOR]

Herein, we are presenting the synthesis of pure WO 3 nanoparticles (NPs) and WO 3 /NiWO 4 nanocomposites (NCs) with improved photocatalytic activities via a simple co-precipitation process. Structural, morphological, and compositional studies approved the synthesis of the nanocomposite. Furthermore, XPS analysis confirm the chemical composition and incorporation of Ni in the final products. The Scherrer equation used to determine the crystallite size and noticed that it reduced from 34 to 21 nm on Ni added in WO 3 and also FESEM study give the average grain size of NPs around 30 nm. HRTEM and SAED studies reveals the nanocomposite phase with lattice spacing of ~0.37 nm, and ~0.29 nm, which is perfectly matched with (020) of WO 3 and (111) of NiWO 4 , respectively. FTIR analysis reveals the functional groups of the formation of WO 3 /NiWO 4 NCs. Diffused reflectance spectroscopy was employed to determine the energy gap (E g) through Kubelka-Munk relation and noticed that the E g value is reduced from 2.61 to 2.49 eV. PL emission analysis was done under 280 nm excitation and possess the intense emission peaks at 361, 383, 412, and 492 nm, among them 383 nm is high intense, which is originated from near band edge transition. The photocatalytic degradation of Methylene blue (MB) dye was investigated under UV light. The percent degradation of MB dye was observed to be ~70.83%, 71.88%, 76.39%, 86.81% and 90.63% for pure WO 3 , 5 wt% Ni, 10 wt% Ni, 15 wt% Ni and 20 wt% Ni nanocomposites, respectively. The maximum percent photodegradation of MB dye has been done ∼90.63% for 20 wt% Ni within 80 min of duration. These outcomes revealed that the prepared WO 3 /NiWO 4 NCs will be highly applicable for hazardous MB dye degradation. BET analysis, pseudo-first-order kinetic plot for photo-degradation of MB solution and elemental trapping experiment. [Display omitted] • Facile synthesis of novel WO 3 and WO 3 /NiWO 4 nanocomposites was attained via low-cost co-precipitation method. • XRD, XPS & EDX analyses confirm the synthesis of WO 3 and WO 3 /NiWO 4 nanocomposite. • TEM/HRTEM/SAED analyses confirm low dimension spherical NPs synthesis. • Energy gap systematically reduced from 2.61 to 2.49 eV on increasing the Ni concentrations in WO 3. • Highest photocatalytic degradation of MB dye was noticed for 20% Ni (WO 3 /NiWO 4) specimen. [ABSTRACT FROM AUTHOR]