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Presents a study that proposed a theory for the junction capacitance of mathematically abrupt diodes. Derivation of a general junction capacitance formula; Information on a capacitance formula for an abrupt junction; Evaluation of the general capacitance formula for symmetrical and asymmetrical abrupt junction.

Focuses on a study which detailed the calculation of the interaction energy of arrays of dislocations with nonperiodic distribution. Reason for conducting the calculations; Focus of studies on strain relaxation in pseudomorphic epilayers; Situation in which the calculated rate of strain relaxation on annealing the metastable layers at higher temperatures is increased.

An overview is given concerning industrial technologies, IMEC's advanced pilot line crystalline silicon solar cell technologies and medium term developments for industrial crystalline silicon terrestrial solar cell fabrication. Also IMEC's work on thin film crystalline silicon solar cells is shortly presented, all of this taking into account the existing market and technology trends. [ABSTRACT FROM AUTHOR]

Novel methods of GaAs surface passivation are investigated. Passivation is acheived by simple chemical treatments using aqueous solutions of Na2S, KOH, RuCl3, and K2Se. GaAs pn homojunction solar cells are used to evaluate the effectiveness of these passivation techniques. A significant reduction in minority-carrier surface recombination velocity is demonstrated. In the best case, the surface recombination velocity decreased from 5×106 cm/s (untreated surface) to 103 cm/s. In addition, we observe improvements in solar cell photogenerated current, short wavelength spectral response, open-circuit voltage, and junction ‘‘dark’’ current. [ABSTRACT FROM AUTHOR]