1. Epitaxial (Pb,La)(Zr,Ti)O3 thin films on buffered Si(100) by on-axis radio frequency magnetron sputtering
- Author
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Nordseth, Ø., Tybell, T., and Grepstad, J.K.
- Subjects
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EPITAXY , *TITANATES , *THIN films , *SPUTTERING (Physics) , *SUBSTRATES (Materials science) , *CHEMICAL structure , *X-ray diffraction , *ATOMIC force microscopy - Abstract
Abstract: In this study, we discuss the case for integration of epitaxial (Pb,La)(Zr,Ti)O3 (PLZT) thin films with silicon for electro-optic device applications. PLZT films, approximately 500 nm thick, were grown by on-axis radio frequency magnetron sputtering on CeO2/YSZ-buffered Si(100) substrate with a SrRuO3 electrode layer embedded between CeO2 and PLZT. The structural properties and surface topography of the different oxide layers were examined with X-ray diffraction analysis and atomic force microscopy. The perovskite thin films were predominantly (001)-oriented, with a (002) rocking curve halfwidth of approximately 0.3° and a surface roughness compatible with requirements for application in optical devices. The PLZT cation stoichiometry was assessed from quantitative X-ray photoelectron spectroscopy. These measurements uncovered a substantial depletion of lead in the film surface for layers deposited at substrate temperatures above ~600 °C, whereas the surface concentration of La, Zr and Ti remained virtually unaffected over a wide range of growth temperatures. [Copyright &y& Elsevier]
- Published
- 2009
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