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Despite the widespread applications of high-pressure plasma in semiconductor and display industry, such as deposition and ashing process, the use of cutoff probes for diagnosing high-pressure plasma was rarely studied. In this study, we investigated a method of measuring electron density in a cutoff probe using the resonance peak in a high-pressure plasma environment. This method is validated through both electromagnetic wave simulations and experimental methodologies. Our findings reveal that the proposed method demonstrates discrepancies of less than 1.47% compared to the input plasma frequency in the results of electromagnetic wave simulations at a gas pressure of 10 mTorr, while at 2.5 Torr, it exhibited a maximum discrepancy of 13.3% when selecting resonance frequencies lower than the electron–neutral collision frequency. This discrepancy at high pressure is reduced to within 1.92% by selecting a resonance frequency higher than the electron–neutral collision frequency. Also, the feasibility of these electron density measurements has been confirmed under conditions of high gas pressure where the cutoff frequency is not measurable, as evidenced by both simulation and experimental results. Our research on the diagnostic methods in high-pressure plasmas could significantly enhance the measurement and interpretation of plasma parameters in various industrial processes. [ABSTRACT FROM AUTHOR]

In thin film deposition, Ar/SiH4 mixtures are widely used to make polysilicon (poly-Si) and hydrogenated amorphous silicon (a-SiH) layers. Despite extensive research conducted on this mixture, little research has focused on the variations in plasma properties, radicals, and ions that occur during plasma discharge in inductively coupled plasma (ICP) equipment compared to capacitive coupled plasma equipment. In this paper, we investigate the properties of the plasma generated through mathematical modeling of Ar/SiH4 inductive coupled plasma discharge by using the electron energy distribution function (EEDF) obtained by solving the Boltzmann equation. We closely examine the variation in plasma properties and the correlation of plasma variables by controlling the radio frequency power and gas pressure during the process conditions. The Boltzmann equation was computed by assuming the two-term approximation, resulting in a Druyvesteyn-like EEDF due to the high-pressure conditions. To validate the simulation model, the 2D simulation results were compared with probe measurements performed in a two-turn ICP chamber. The results demonstrated encouraging agreement with the measured data. This research not only enhances our comprehension of the discharge characteristics but also establishes a framework for optimizing the discharge conditions to enhance the process and effectively regulate external variables. [ABSTRACT FROM AUTHOR]

In this study, we examined the potential errors in plasma-density measurements using the cutoff probe method under various structural conditions, such as tip distance and length. Our studies indicate that under conditions of thin sheath thickness, the length or distance of the metal tips on the cutoff probe has a slight effect on the plasma transmission spectrum or cutoff frequency. However, under conditions with a notably thick sheath, the structure of the probe tip can cause an error of up to 2% between the measured cutoff frequency and actual plasma frequency. Consequently, for precise measurements of plasma density using the cutoff probe method, it is imperative to maintain a probe tip distance exceeding five times the sheath width and utilize a sufficiently long probe tip length. This finding is anticipated to provide essential guidelines for the design and fabrication of effective cutoff probes and enhance the accuracy of plasma-density measurements using a cutoff probe. [ABSTRACT FROM AUTHOR]

In this study, the influence of ceramic shield characteristics, including thickness and geometry, on the transmission spectrum and electron density measurements of a ceramic shield cutoff probe (CSC) was investigated to measure high-density or process plasma. Through electromagnetic simulations and circuit modeling, we examined the measurement characteristics of the CSC based on different ceramic shield geometries. When the ceramic shield is sufficiently thin, it does not affect the CSC wave transmission characteristics. However, for a thick ceramic shield, a cutoff frequency shift of up to 3% toward the lower side can occur. This shift is attributed to the electrical properties of the ceramic material, which can function as a parasitic capacitor. In addition, when fabricating a CSC, depending on the shape of the ceramic shield or the method used to couple it with the CSC body, a cutoff frequency shift can occur toward the lower side. The simulation results were validated through experiments, revealing a cutoff frequency shift toward the lower side of up to 18.0% in the simulations and up to 11.6% in the experiments. The findings of this study could assist in high-density or processing plasma measurements using cutoff probes. [ABSTRACT FROM AUTHOR]

Herein, we investigated the effect of a dielectric film on the transmission spectrum of a bar-type flat cutoff probe (BCP). By conducting electromagnetic wave simulations, we found that placing a dielectric film with a thickness of 1 mm or less on the sensor did not affect the measurement of the BCP under thin sheath condition. However, a film thickness of 1 mm or more results in a low-frequency shift in the cutoff frequency. The shift in the cutoff frequency was related not only to the film thickness, but also to the dielectric constant of the film and sheath width, which could be understood through a circuit model of the BCP. The calculated results were experimentally validated using alumina plates of various thicknesses. Consequently, our findings demonstrate that measuring the electron density on a BCP is feasible even when a dielectric film is deposited, thereby improving the accuracy of the measurement. [ABSTRACT FROM AUTHOR]

We investigated the effect of the sheath around the probe tips on the transmission spectrum of a cutoff probe using an electromagnetic simulation and a circuit model. Our results show that the width of the sheath can change the transmission spectrum, which can affect the absolute value of the electron density. In a real-world cutoff probe structure, this effect may become apparent in a low-density plasma or when a high bias voltage is applied to the plasma. The key factor is capacitance, which contains the sheath component. In the case of a low-density plasma, the change in the sheath capacitance of the sheath region contributes to the shift in the resonant frequency. For thick sheath widths, at least a 5% discrepancy can occur between the actual plasma frequency and the measurement owing to variations in the capacitance, particularly the sheath components surrounding the probe. We expect that this study will facilitate reduction in the measurement error and uncertainty in microwave cutoff probe measurements, particularly when applied to low-density plasma measurements. [ABSTRACT FROM AUTHOR]

A flat-cutoff sensor installed on the chamber wall or chuck allows precise measurement of the plasma density in real time, even with a wafer placed on the sensor. However, a few studies have been conducted on the measurement characteristics in an environment where a wafer containing a metal layer is placed on a sensor. In this study, we investigated the effect of wafers containing metal layers on flat-cutoff sensor measurements using circuit models and experiments. The metal layer in the wafer shifts the cutoff frequency up to four times higher, and the degree of shift depends on the plasma density. The relationship between the shift in the cutoff frequency and plasma density can be interpreted as the ratio of the plasma inductance to that of the metal layer from the circuit model of the flat-cutoff sensor. The calculation results were verified experimentally using wafers containing Al and Ti metal layers. As a result, measurement was found to be possible even when a wafer containing a metal layer was placed on a flat-cutoff sensor, and these results can improve the measurement accuracy of the flat-cutoff sensor for the real-time plasma measurement. [ABSTRACT FROM AUTHOR]

Real-time monitoring of plasma parameters at the wafer plane is important because it significantly affects the processing results, yield enhancement, and device integrity of plasma processing. Various plasma diagnostic sensors, including those embedded in a chamber wall and on-wafer sensors, such as flat-cutoff sensors, have been developed for plasma measurements. However, to measure the plasma density on the wafer surface in real-time when processing plasma with bias power, such as in the semiconductor etching process, one must analyze the transmission spectrum of the flat-cutoff sensor in an environment with bias power applied. In this study, the transmission-spectrum and measured plasma-density characteristics of an electrode-embedded flat-cutoff sensor are analyzed via electromagnetic simulations and experiments under applied bias power. Our findings indicate that the flat-cutoff sensor accurately measures the plasma density, which is equivalent to the input plasma density under low bias power. Conversely, under high bias power, the plasma density measured by the sensor is lower than the input plasma density. Also, a thick-sheath layer is formed owing to the high bias power, which may complicate the measurement of plasma parameters using the flat-cutoff sensor. Plasma diagnostics using a flat-cutoff sensor in thick-sheath environments can be achieved by optimizing the flat-cutoff sensor structure. Our findings can enhance the analysis of plasma parameters on-wafer surfaces in processing environments with bias power applied. [ABSTRACT FROM AUTHOR]

In the semiconductor manufacturing process, when conducting inductively coupled plasma-reactive ion etching in challenging environments, both wafers and the ceramic components comprising the chamber's interior can be influenced by plasma attack. When ceramic components are exposed to long-term plasma environments, the eroded components must be replaced. Furthermore, non-volatile reactants can form and settle on semiconductor chips, acting as contaminants and reducing semiconductor production yield. Therefore, for semiconductor processing equipment parts to be utilized, it is necessary that they exhibit minimized generation of contaminant particles and not deviate significantly from the composition of conventionally used Al2O3 and Y2O3; part must also last long in various physicochemical etching environment. Herein, we investigate the plasma etching behavior of Y2O3–Y4Al2O9 (YAM) composites with a variety of mixing ratios under different gas fraction conditions. The investigation revealed that the etching rates and changes in surface roughness for these materials were significantly less than those of Y2O3 materials subjected to both chemical and physical etching. Microstructure analysis was conducted to demonstrate the minimization of crater formation. Mechanical properties of the composite were also analyzed. The results show that the composite can be commercialized as next-generation ceramic component in semiconductor processing equipment applications. [ABSTRACT FROM AUTHOR]

In the industrial semiconductor plasma processing, plasma density and its spatial distribution are critical for the understanding of discharge physics and the enhancement of the processing yield via monitoring of the status of plasma processing. Thus, real-time monitoring of plasma density and uniformity in the wafer region during wafer processing have been receiving significant attention. In this study, we developed an electrode-embedded flat-cutoff array sensor for the real-time measurement of electron density uniformity during wafer processing. We measured the spatial distribution of electron density on the wafer surface, compared it with the results measured in the bulk plasma region, and found different plasma distributions between the two where this difference can be attributed to local electron kinetics. We also performed plasma etching of amorphous carbon materials, which showed a clear correlation with the electron density distribution measured by the flat-cutoff array sensor. This indicates that the electron density distribution on the wafer surface is crucial for the process result. Thus, the array sensor developed in this study can be applied not only to measure plasma uniformity but also to predict the wafer process beforehand, making it highly significant for industrial plasma processing methods, such as virtual metrology. [ABSTRACT FROM AUTHOR]

Fine tuning of plasma parameters is essential in semiconductor plasma processing because of the demand for smaller, low-power, and high-integration nanoelectronic devices in the semiconductor industry. Existing method monitors process abnormality based on the real-time measurement of some in situ processing sensors, such as optical emission spectroscopy and voltage–current sensor, owing to the absence of a direct plasma measurement sensor applicable to in situ plasma processing monitoring. In this paper, we propose a microwave flat cutoff probe and its circuit modeling, in which the plasma and sheath are considered as coplanar capacitance. The circuit model was verified through both electromagnetic simulation and experiment, and the results were found to be in good agreement. Through this circuit model with the coplanar capacitance, the effect on the distance between the microwave radiating antenna and detecting antennawas analyzed in detail. [ABSTRACT FROM AUTHOR]

Atomic layer etching (ALE), a cyclic process of surface modification and removal of the modified layer, is an emerging damage-less etching technology for semiconductor fabrication with a feature size of less than 10 nm. Among the plasma sources, inductively coupled plasma (ICP) can be a candidate for ALE, but there is a lack of research linking discharge physics to the ALE process. In this study, we comprehensively investigated the discharge physics of ICPs with a radio frequency (RF) bias and Ar/C4F6 mixture to be considered for the ALE process. Detailed studies on the discharge physics were conducted in each step of ALE (i.e., modification step, removal step) as well as the whole cycle as follows: (1) In the general ALE cycle, plasma properties dependent on the chamber geometry and the discharge mode of the ICP were analyzed; (2) in the modification step, a plasma instability with molecular gas was observed. The timescale for molecular gas removal was also investigated; (3) in the removal step, changes in plasma characteristics with the RF bias power were studied. Based on measurements of these plasma physical parameters, the discharge condition for ALE was optimized. ALE was performed on various thin films, including a-Si, poly c-Si, SiO2, and Si3N4. For each thin film, thicknesses of 0.5–2.0 nm were etched per cycle, as in quasi-ALE. Finally, ALE was performed on a patterned wafer, and the etch thickness of 0.6 nm per cycle and fine etch profile were obtained. [ABSTRACT FROM AUTHOR]

The microwave planar cutoff probe, recently proposed by Kim et al. is designed to measure the cutoff frequency in a transmission (S21) spectrum. For real-time electron density measurement in plasma processing, three different types have been demonstrated: point-type, ring-type (RCP), and bar-type (BCP) planar cutoff probes. While Yeom et al. has shown that the RCP and BCP are more suitable than the point-type probe for process monitoring, the basic characteristics of the ring- and bar-type probes have yet to be investigated. The current work includes a computational characterization of a RCP and BCP with various geometrical parameters, as well as a plasma parameter, through a commercial three-dimensional electromagnetic simulation. The parameters of interest include antenna size, antenna distance, dielectric thickness of the transmission line, and input electron density. Simulation results showed that the RCP has several resonance frequencies originating from standing-wave resonance in the S21 spectrum that the BCP does not. Moreover, the S21 signal level increased with antenna size and dielectric thickness but decreased with antenna distance. Among the investigated parameters, antenna distance was found to be the most important parameter to improve the accuracy of both RCP and BCP. [ABSTRACT FROM AUTHOR]

The effect of radio-frequency bias on electron density in an inductively coupled plasma reactor was measured using a wave cutoff probe, over a wide range of conditions in pure Ar, pure CF4, and 50%–50% mixtures of Ar/CF4, at pressures of 0.7–4.0 Pa (5–30 mTorr), bias frequencies of 10–30 MHz, bias voltages up to 750 V, and inductive source powers of 50–300 W. Also, at selected experimental conditions, comparisons with Langmuir probe measurements were made. Two types of bias-induced changes in electron density were detected. First, at high source powers, we observed a bias-induced decrease in electron density, which had a slow time response (several minutes), a linear dependence on bias voltage, and little or no dependence on bias frequency or pressure. This decrease is a gas composition effect caused by etch or sputter products liberated from the wafer surface. Second, at low source powers, we observed a faster, bias-induced increase in electron density, which was proportional to the bias frequency and the square root of the bias voltage. This second effect was caused by absorption of bias power by electrons via stochastic heating. Simple models of each effect were derived and were shown to yield quantitative predictions in agreement with the observations. To obtain correct predictions, the effect of bias-induced electron heating cannot be considered by itself; rather, its effect on the efficiency of the inductive source must also be considered. [ABSTRACT FROM AUTHOR]

The effect of applying a bias to the substrate on the size and amount of charged crystalline silicon nanoparticles deposited on the substrate was investigated in the inductively coupled plasma chemical vapor deposition process. By inserting the grounded grid with meshes above the substrate, the region just above the substrate was separated from the plasma. Thereby, crystalline Si nanoparticles formed by the gas-phase reaction in the plasma could be deposited directly on the substrate, successfully avoiding the formation of a film. Moreover, the size and the amount of deposited nanoparticles could be changed by applying direct current bias to the substrate. When the grid of 1 × 1-mm-sized mesh was used, the nanoparticle flux was increased as the negative substrate bias increased from 0 to - 50 V. On the other hand, when a positive bias was applied to the substrate, Si nanoparticles were not deposited at all. Regardless of substrate bias voltages, the most frequently observed nanoparticles synthesized with the grid of 1 × 1-mm-sized mesh had the size range of 10-12 nm in common. When the square mesh grid of 2-mm size was used, as the substrate bias was increased from - 50 to 50 V, the size of the nanoparticles observed most frequently increased from the range of 8-10 to 40-45 nm but the amount that was deposited on the substrate decreased. [ABSTRACT FROM AUTHOR]

Octadecyl-terminated silicon nanocrystals ( ODE-Si NCs) are obtained via a surface-initiated thermal hydrosilylation reaction on hydride-terminated Si NCs (HSi NCs). Pristine Si NCs were synthesized at the gram scale by using inductively coupled plasma chemical vapor deposition ( ICP-CVD). The HSi NCs were produced through a chemical etching process with hydrofluoric acid ( HF), ethanol ( EtOH), and distilled water (d- H2O). The results obtained from X-ray diffraction ( XRD) and field emission scanning electron microscopy ( FE-SEM) indicate that the synthesized Si NCs obtained via ICP-CVD have diamond cubic-structured silicon with a grain size of 10 nm and a densely packed Si NC array consisting of individual NCs. Organo-functionalized Si NCs, i.e., ODE-Si NCs, are well soluble in organic solvent whereas pristine Si NCs synthesized through ICP-CVD are not. The surface chemistry of the ODE-Si NCs was confirmed via Fourier transform infrared spectroscopy ( FT-IR), proton nuclear magnetic resonance spectroscopy ( 1H-NMR), and field emission transmission electron microscopy ( FE-TEM). Thereby, these newly synthesized and scalable organo-functionalized Si NCs are applicable as raw materials for practical use in devices by tuning the surface chemistry with various capping molecules. [ABSTRACT FROM AUTHOR]

The wave cutoff probe, a precise measurement method for measuring the electron density, was recently proposed. To characterize the cutoff probe system, in this paper, the microwave simulations of a cutoff probe system were performed at various configurations of the cutoff probe system. The influence of the cutoff probe spectrum stemming from numerous parametric elements such as the probe tip length, probe tip distance, probe tip plane orientation, chamber volume/geometry, and coaxial cable length is presented and discussed. This article is expected to provide qualitative and quantitative insight into cutoff probe systems and its optimization process. [ABSTRACT FROM AUTHOR]

This paper proposes a new method for cutoff probe using a nanosecond impulse generator and an oscilloscope, instead of a network analyzer. The nanosecond impulse generator supplies a radiating signal of broadband frequency spectrum simultaneously without frequency sweeping, while frequency sweeping method is used by a network analyzer in a previous method. The transmission spectrum (S21) was obtained through a Fourier analysis of the transmitted impulse signal detected by the oscilloscope and was used to measure the electron density. The results showed that the transmission frequency spectrum and the electron density obtained with a new method are very close to those obtained with a previous method using a network analyzer. And also, only 15 ns long signal was necessary for spectrum reconstruction. These results were also compared to the Langmuir probe's measurements with satisfactory results. This method is expected to provide not only fast measurement of absolute electron density, but also function in other diagnostic situations where a network analyzer would be used (a hairpin probe and an impedance probe) by replacing the network analyzer with a nanosecond impulse generator and an oscilloscope. [ABSTRACT FROM AUTHOR]

Recently, an anomalous evolution of argon metastable density with plasma discharge power (electron density) was reported [A. M. Daltrini, S. A. Moshkalev, T. J. Morgan, R. B. Piejak, and W. G. Graham, Appl. Phys. Lett. 92, 061504 (2008)]. Although the importance of the metastable atom and its density has been reported in a lot of literature, however, a basic physics behind the anomalous evolution of metastable density has not been clearly understood yet. In this study, we investigated a simple global model to elucidate the underlying physics of the anomalous evolution of argon metastable density with the electron density. On the basis of the proposed simple model, we reproduced the anomalous evolution of the metastable density and disclosed the detailed physics for the anomalous result. Drastic changes of dominant mechanisms for the population and depopulation processes of Ar metastable atoms with electron density, which take place even in relatively low electron density regime, is the clue to understand the result. [ABSTRACT FROM AUTHOR]

Reports on measurements of the external electrical characteristics of helicon wave plasmas over a wide range of operating parameters. Experimental apparatus; Electrical characteristics against magnetic field; Dependence on the frequency against discharge power.

Investigates the characteristics of the plasma produced by plane polarized mode helicon waves. Experimental apparatus; Findings and analysis of results; Conclusions.

A study on the dependence of electron energy distribution function (EEDF) on discharge gap size in capacitive rf discharges was conducted. The evolution of the EEDF over a gap size range from 2.5 to 7 cm in 65 mTorr Ar discharges was investigated both experimentally and theoretically. The measured EEDFs exhibited typical bi-Maxwellian forms with low energy electron groups. A significant depletion in the low energy portion of the bi-Maxwellian was found with decreasing gap size. The results show that electron heating by bulk electric fields, which is the main heating process of the low-energy electrons, is greatly enhanced as the gap size decreases, resulting in the abrupt change of the EEDF. The calculated EEDFs based on nonlocal kinetic theory are in good agreement with the experiments. [ABSTRACT FROM AUTHOR]

A method for the measurements of electron temperature in the plasma using cutoff frequency and surface wave absorption frequency is described. The cutoff frequency, which gives directly the plasma density, is obtained from the transmission spectrum measured between two antennas exposed to the plasma. The surface wave absorption frequency, which has the information of the sheath determined by the electron density and the electron temperature, is obtained from the reflection spectrum measured at radiating antenna. The electron temperature is derived from the dispersion equation of the surface wave with the electron density measured from cutoff frequency. [ABSTRACT FROM AUTHOR]

The behavior of the CF2 radical was studied in a CF4 inductively coupled plasma. The CF2 radical was measured using a laser-induced fluorescence method. Absolute electron density was measured using a cutoff probe and the electron temperature was measured using a double probe to study the relationship between these electron properties and the CF2 radical. To examine the relationship between them, the CF2 radical and electron density were measured as a function of the rf power, which is a major external parameter influencing the electron density. As the rf power was increased, the CF2 radical density increased in the range of low electron density, and then decreased beyond a critical electron density. The dependence of the CF2 radical density on the electron density was theoretically analyzed with rate equations. The theoretical result was in good agreement with experiment. [ABSTRACT FROM AUTHOR]

Carbon nitride films were deposited on Si(100) substrates by radio frequency (RF) magnetron sputtering at different working pressures and gas ratios. The effect of the gas pressure on the molecular structure of the carbon nitride films and CxNy molecular behavior has been discussed. A quadrupole mass spectrometer (QMS) was fitted with a chamber to investigate CxNy molecular species in the gas phase. The composition and bonding were analyzed by Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). An increase in film growth rate was observed with increasing working pressure and nitrogen proportion in the sputtering gas. However, the film growth rate decreased when the working pressures were over ∼10 mTorr. The N/C ratios in the CNx film were in the range of 0.52–0.67 and increased with working pressure. The XPS and FTIR spectra confirmed that a decrease in working pressure resulted in an increase in the number of sp3 C–N bonds. It may be concluded that the decrease in C2N molecules containing a high proportion of carbon and the increase in CN2 containing a high proportion of nitrogen due to the increase in working pressure affected N incorporation in the films. [ABSTRACT FROM AUTHOR]