7 results on '"Li C.I."'
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2. Mitigating eSiGe strain relaxation using cryo-implantation technology for PSD formation.
3. A new and simple experimental approach to characterizing the carrier transport and reliability of strained CMOS devices in the quasi-ballistic regime.
4. Control of Source and Drain Extension Phosphorus Profile by Using Carbon Co-Implant.
5. Superior Spike Annealing Performance in 65nm Source/Drain Extension Engineering.
6. Dopant and thermal interaction on SPE formed SiC for NMOS performance enhancement.
7. Design of high-performance and highly reliable nMOSFETs with embedded Si:C S/D extension stressor(Si:C S/D-E).
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